USO0RE41215E
(19) United States (12) Reissued Patent
(10) Patent Number:
Miyake et a]. (54)
(45) Date of Reissued Patent:
SEMICONDUCTOR DEVICE
4,582,395 A 4,633,105 A
(75) Inventors: Hiroyuki Miyake, KanagaWa (JP); Yutaka Shionoiri, KanagaWa (JP)
4,804,870 A
2/1989 Mahmud 9/1990 Shler et al' C
APP1-NO-I 11/484,030
d
EP
0 055 136
6/1982
EP
1 063 630
12/2000
EP
1 139326
10/2001
Jul. 11, 2006
(Continued)
Related US. Patent Documents Reissue of:
t'
( on mue ) FOREIGN PATENT DOCUMENTS
(JP)
(22) Filed:
Apr. 13, 2010
4/1986 MoroZumi 12/1986 Tsujimoto
4,959,697 A
(73) Assignee: Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, KanagaWa-ken
(21)
US RE41,215 E
OTHER PUBLICATIONS -
_
US 6,646,476, 11/2003, Nagao et al. (WlthdraWn)
(64) §aten(t1_NO"
278832304
Search Report (Singapore Application No. 20020296942,
:51“; N _ F.I1)pd'_ 0"
18202’ 861 J l 26’ 2002
?led May 16, 2002), mailed Apr. 27, 2004, 3 pages. Written Opinion (Singapore Application No. 20020296942,
16 ~
(30)
“-
’
?led May 16, 2002), mailedApr. 27, 2004, 4 pages.
Foreign Application Priority Data
O?ice Action (Japan Patent Application No. 200242211125) dated Jun. 8, 2007, 6 pages including full English transla
Jul. 30, 2001
(JP) ..................................... .. 2001-229054
(51) Int_ CL
O?ice Action (U.S. App. No. 11/463,356) mailed Sep. 12,
H03K 19/01 75 (52)
(2006.01)
2007a 10 Pages~ Primary ExamineriVibol Tan
US. Cl. ............................ .. 326/88; 326/81; 326/83;
326/119; 326/68; 327/390; 345/204; 345/94;
345/100
(58)
Field of Classi?cation Search .................. .. 326/81,
326/83’ 88’ 62’ 68’ 119’ 121’ 112; 327/333; _
_
345094’ 211’ 214
See apphcanon ?le for Complete Search hlstory' (56)
3,506,851 A
4/1970
A
11/1973
3,898,479 A
8/1975
4,090,096 A A 4,412,139 A 4,443,714 A
5/1978 10/1983 4/1984
(57)
ABSTRACT
A circuit With a large load driving capability, Which is struc
tured by single polarity TFTs, is provided. With a capacitor (154) formed between a gate electrode and an output elec
Without amplitude attenuation of an output signal due to the
_ Polklnghom et a1‘ Bapat . Proebstlng Nagami Koike Horninger Nakano et a1.
TFT threshold value. In addition, a capacitor (155) formed between a gate electrode and an output electrode of a TFT . . . . (153) compensates for lncreaslng the electrlc potentlal of the 1 d f h TFT 152 d 1 1 d d . . gate eectro e o ‘t e ( ), an a arger oa rlvlng Capablllty 1S Obtalned.
36 Claims, 22 Drawing Sheets
v00
v00 t
lnb>—- 151l
(74) Attorney) Agent) or pirmipish & Richardson p_C_
trode of a TFT (152), the electric potential of the gate elec trode of the TFT (152) is increased by a boot strap and normal output With respect to an input signal is obtained
References Clted U_g_ PATENT DOCUMENTS 3,774,055
tim
‘L52
J,
\
£1132 +1 56 1>---—-b Out
/:;| |--<- 154 In >
155
]
I $53
157
?
_l_ vss
vss
US RE41,215 E Page 2
US. PATENT DOCUMENTS
2002/0190326 A1
1/2003 AZami et :11.
1/2003 Miyake 6131.
5,467,038 A
11/1995 Motley eta1~
2003/0020520 A1
5,548,143 5,643,826 5,694,061 5,870,071 5,889,291
A A A A A
Lee Ohtaniet a1. Morosawa et a1. Kawahata Koyama et a1,
2003/0034806 2003/0052324 2003/0111677 2004/0252111 2004/0257353
5,949,271 5,949,398 5,952,991 6,040,810
A A A A
8/1996 7/1997 12/1997 2/1999 3/1999 9/1999 9/1999
Fujikura Kim
2006/0290380 A1
6,049,228 6,091,393 6,384,804 6,501,098 6,522,323 6,542,138
A A B1 B2 B1 B1
3/2000 4/2000 7/2000 5/2002 12/2002 2/2003 4/2003
Nishimura MOOII Park Dodabalapur et 31. Yamazaki Sasakietal. Shannon et a1.
6,686,899 B2 *
6,788,108 6,813,332 6,928,136 7,091,749
B2 B2 B2 B2
9/1999 Akiyama
2/2004 Miyazawa e131. ........ .. 345/100
9/2004 et a1. 11/2004 Nagao 6131. 8/2005 Nagao et a1. 8/2006 et a1.
7,307,463 B2 * 12/2007 Miyake e131. ............ .. 327/437
2001/0002703 2001/0045565 2002/0011973 2002/0044208 2002/0089496 2002/0097212 2002/0158666 2002/0167026
A1 A1 A1 A1 A1 A1 A1 A1
6/2001 11/2001 1/2002 4/2002 7/2002 7/2002 10/2002 1l/2002
Koyama Yamazaki Komiya Yamazaki et a1. Numao Miyazawa et a1. AZamiet a1. Azami et a1.
12/2002 Nagao et a1.
2003/0011584 A1
A1 A1 A1 A1 A1
2/2003 3/2003 6/2003 12/2004 12/2004
AZami Kimura Miyake Cheon et :11. Imamura etal.
12/2006 Miyake et a1.
FOREIGN PATENT DOCUMENTS JP JP JP JP JP JP JP
55_156427 56_09343l 57_106228 57432191 59_0l6424 60440924 63_2048l5
l2/1980 7/198l '7/1982 8/1982 H1984 M985 8/l988
JP
03465171
7/1991
JP JP JP JP
06_09808l 08051219 09046216 09486312
4/1994 2/1996 2/1997 7/1997
JP
09446936
9/1997
JP JP JP JP JP JP
2000_l066l7 2001005426 2001409394 2001_133431 2002476162 2002_25ll64
4/2000 V2001 4/2001 5/2001 @2002 9/2002
* cited by examiner
US. Patent
Apr. 13, 2010
Fig.1A
Sheet 1 0f 22
US RE41,215 E
Fig.1B
v00
v00
miniiL
102
m >-——— _i
°3
l ‘
v00
X92
105
‘I01
l‘ 2 155
104
V
106
vss
"1 >—-—---
v00
24m;
152
VSS
156
om Ii
53 vss
1302
VDD
v00
157 vss
US. Patent
Apr. 13, 2010
Sheet 2 0f 22
US RE41,215 E
Fig.2B Fig.2A m
VDD
52
1Ci? P154 ‘132
lnb f
15s
la.
151
155
V1526
/
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154
V1528 --157
L V83
Fig.2C VSS V1526 45 V1523 VSS
5
VDD V1536
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V1526 VSS - AVf ' 5s
vss V1536 VDD-VthN + AVf V1526
Fig.2E V1528 V00 15 5
vss | V1536
US. Patent
Apr. 13, 2010
Fig.3
Sheet 3 0f 22
US RE41,215 E
303
SP S-CK S-CKb
Video1
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ASWXB
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Apr. 13, 2010
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US RE41,215 E
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US. Patent
503a
Apr. 13, 2010
5034
Sheet 8 0f 22
5035
!
US RE41,215 E
5037
Fig.8C 5038
5039
I
5040
5036
US. Patent
Apr. 13, 2010
I
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Sheet 9 0f 22
US RE41,215 E
2+ Vs?
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Vs?
US. Patent
Apr. 13, 2010
Fig-11A
Sheet 11 0f 22
VD”
US RE41,215 E
Fig.11B 1101
In
Out
In
L
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Out
H
L
1102
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Fig_11C ln>
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US. Patent
Apr. 13, 2010
Fig.12A
Sheet 12 0f 22
US RE41,215 E
"0°
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A
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US. Patent
Apr. 13, 2010
Sheet 13 0f 22
Fig.13A VDD
um ______
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1302
1301
Out 1 304
In
>—-——--’ 1303 V55
Fig.13B
1350
US RE41,215 E
US. Patent
Apr. 13, 2010
Sheet 14 0f 22
US RE41,215 E
Fig.14 horizontal period n-I orizontal period :1
B
+—————-—
return sampling period————->|<—period
A m n
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Fig. 16A
6001
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Fig.16C
Apr. 13, 2010
6006
Sheet 16 0f 22
6007
6002
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US RE41,215 E
6008
US. Patent
Apr. 13, 2010
Sheet 17 0f 22
US RE41,215 E
US. Patent
Apr. 13, 2010
Fig.18A VBILD
Sheet 18 0f 22
V00
US RE41,215 E
V00
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