Function Description Active LOW Reset signal Chip select input pin (LOW enable) Display data / Common selection D/CX=’1’: Display data D/CX=’0’: Command data Write enable in parallel interface Data bus Data bus Data bus Data bus Data bus Data bus Data bus Data bus Connect to GND Connect to GND Connect to GND Connect to GND Connect to GND Connect to GND Connect to GND Connect to GND Supply voltage (3.3V) Ground Cathode pin of backlight (3.2V) Anode pin of backlight Cathode pin of backlight (3.2V) No connection
5 Electrical Characteristics Item Supply Voltage For Logic Digital Operation Current Low Level Input Voltage High Level Input Voltage Low Level Output Voltage High Level Output Voltage Backlight Forward Voltage Backlight Forward Current Operating Temperature Storage Temperature
Symbol VDD IDD VIL VIH VOL VOH VLED ILED TOP TST
Condition
Typ. 3.3 1.5 -
VLED=3.2V Absolute Max
Min 2.5 GND 0.7VDD GND 0.8VDD 30 -20
3.2 40 -
Max 4.2 0.3VDD VDD 0.2VDD VDD +70
Absolute Max
-30
-
+80
Max
Unit ° ° ° ° ms %
VDD=3.3V
Unit V mA V V V V V mA ℃ ℃
6 Optical Characteristics Item View Angles Top View Angles Bottom View Angles Left View Angles Right Response Time (25° C) Uniformity Contrast Ratio Luminance
Parameter Address setup time Address hold time(Write/Read) CSH “H” Pulse Width Chip select setup time(Write) Chip select setup time(Read ID) Chip select setup time(Read FM) Chip select wait time(Write/Read) Write cycle Control pulse H duration Control pulse L duration Read cycle (ID) Control pulse H duration(ID) Control pulse L duration(ID) Read cycle (FM) Control pulse H duration(FM) Control pules L duration(FM) Data setup time Data hold time Read access time(ID) Read access time(FM) Output disable time
When read ID data When read from frame memory For maximum CL=30pF for minimum CL=8pF
www.displaymodule.com
DM-TFT18-308
Note 1: VDDI 1.65 to 3.3V, VCI=2.6 to 3.3V, AGND=GND=0V, Ta=-30 to 70℃ (to +85℃ no change). Note 2: This input signal rise time and fall time (tr, tf) is specified at 15 ns or less. Logic high and low levels are specified as 30% and 70% of VDDI for input signals.
Content of Test Endurance test applying the high storage temperature for a long time.
Test Condition 80℃ 200hrs
2
Low Temperature Storage
Endurance test applying the high storage temperature for a long time.
-30℃ 200hrs
1,2
High Temperature Operation
Endurance test applying the electric stress (Voltage & Current) and the thermal stress to the element for a long time. Endurance test applying the electric stress under low temperature for a long time. The module should be allowed to
70℃ 200hrs
Low Temperature Operation High Temperature/ Humidity Operation
Thermal Shock Resistance
stand at 60℃,90%RH max, For 96hrs under no-load condition excluding the polarizer, Then taking it out and drying it at normal temperature. The sample should be allowed stand the following 10 cycles of operation -20℃ 25℃ 70℃
-
1
60℃,90%RH 96hrs 1,2
-20℃/70℃ 10 cycles -
30min
Vibration Test
Static Electricity Test
5min 30min 1 cycle Endurance test applying the vibration during transportation and using
-20 ℃ 200hrs
Note
Endurance test apply the electric stress to the terminal.
Total fixed amplitude: 15mm; Vibration: 10~55Hz; One cycle 60 seconds to 3 directions of X, Y, Z, for each 16 minutes. VS=800V, RS=1.5kΩ, CS=100pF, 1 time.
3
-
Note1: No dew condensation to be observed. Note2: The function test shall be conducted after 4 hours storage at the normal. Temperature and humidity after remove from the rest chamber. Note3: The packing have to including into the vibration testing.
