SiC Silicon Carbide Diode
5 t h Ge ner ation thin Q! T M 650V SiC Schottky Diode
IDW24G65C5B
Final Da ta sheet Rev. 2.0, 2015-04-13
Po wer Ma nage m ent & M ulti m ark et
5th Generation thinQ!™ SiC Schottky Diode
IDW24G65C5B
Description
1
ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. A combination with a new, more compact design and thinwafer technology results is a new family of products showing improved efficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit (Qc x Vf). The new thinQ!™ Generation 5 has been designed to complement our 650V CoolMOS™ families: this ensures meeting the most stringent application requirements in this voltage range.
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2
3
Features
Revolutionary semiconductor material - Silicon Carbide Benchmark switching behavior No reverse recovery/ No forward recovery Temperature independent switching behavior High surge current capability Pb-free lead plating; RoHS compliant 1) Qualified according to JEDEC for target applications 2)3) Breakdown voltage tested at 9 mA Optimized for high temperature operation
Benefits
System efficiency improvement over Si diodes System cost / size savings due to reduced cooling requirements Enabling higher frequency / increased power density solutions Higher system reliability due to lower operating temperatures Reduced EMI
Applications
Switch mode power supply Power factor correction Solar inverter Uninterruptible power supply
Table 1 Key Performance Parameters Parameter Value Unit VDC 650 V QC; VR=400V 2 x 18 nC EC; VR=400V 2 x 4.1 µJ IF @ TC < 125°C 2 x 12 A Table 2 Pin 1 A
4)
Pin Definition Pin 2 Pin 3 C A
Type / ordering Code IDW24G65C5B
Package PG-TO247-3
Marking D2465B5
1)
J-STD20 and JESD22
2)
All devices tested under avalanche conditions for a time periode of 10ms
3)
Per Leg
4)
Per Device
Final Datasheet
2
Related links www.infineon.com/sic
Rev. 2.0, 2015-04-13
5th Generation thinQ!TM SiC Schottky Diode IDW24G65C5B Table of contents
Table of Contents 1
Description .......................................................................................................................................... 2
2
Maximum ratings ................................................................................................................................ 4
3
Thermal characteristics ..................................................................................................................... 4
4
Electrical characteristics ................................................................................................................... 5
5
Electrical characteristics diagrams .................................................................................................. 6
6
Simplified Forward Characteristics Model ...................................................................................... 8
7
Package outlines ................................................................................................................................ 9
8
Revision History ............................................................................................................................... 10
Final Datasheet
3
Rev. 2.0, 2015-04-1313
5th Generation thinQ!TM SiC Schottky Diode IDW24G65C5B Maximum ratings
Maximum ratings
2 Table 3 Parameter
Maximum ratings Symbol
Continuous forward current
1)
IF
Surge non-repetitive forward current, sine IF,SM 1) halfwave Non-repetitive peak forward current i²t value
1)
1)
Values
Unit
Min.
Typ.
–
–
Max. 12
–
–
71
–
–
56
IF,max
–
–
505
∫ i²dt
–
–
25.4
–
–
Note/Test Condition TC < 125°C, D=1
A
TC = 25°C, tp=10 ms TC = 150°C, tp=10 ms TC = 25°C, tp=10 µs
A²s
TC = 25°C, tp=10 ms
Repetitive peak reverse voltage
VRRM
–
–
15.7 650
V
Tj = 25°C
Diode dv/dt ruggedness
dv/dt
–
–
100
V/ns
VR=0..480 V
Ptot
–
–
152
W
TC = 25°C
-55
–
175
°C
50
70
Ncm
Power dissipation
2)
Tj;Tstg
Operating and storage temperature
–
Mounting torque
TC = 150°C, tp=10 ms
M3 screws
Thermal characteristics
3 Table 4 Parameter
Thermal characteristics TO-247-3 Symbol
Values Min.
Thermal resistance, junction-case
1)
Thermal resistance, junction-ambient
RthJC 1)
Soldering temperature, wavesoldering only allowed at leads
1)
Per Leg
2)
Per Device
Final Datasheet
RthJA Tsold
Unit
–
Typ. 1.5
Max. 2.0
–
–
62
–
–
260
4
Note/Test Condition
K/W
leaded
°C
1.6mm (0.063 in.) from case for 10 s
Rev. 2.0, 2015-04-13
5th Generation thinQ!TM SiC Schottky Diode IDW24G65C5B Electrical characteristics
Electrical characteristics
4 Table 5 Parameter
Static characteristics Symbol 1)
DC blocking voltage 1) Diode forward voltage Reverse current
Table 6 Parameter
1)
Per Leg Per Device
Final Datasheet
Note/Test Condition
VDC
Max. –
VF
–
1.5
1.7
–
1.8
2.1
IF= 12 A, Tj=150°C
–
0.6
190
VR=650 V, Tj=25°C
–
0.2
68
–
2.4
1350
Tj=25°C V
µA
IF= 12 A, Tj=25°C
VR=600 V, Tj=25°C VR=650 V, Tj=150°C
AC characteristics
Total Capacitance
2)
Unit
Typ. –
IR
Symbol
Total capacitive charge
1)
Values Min. 650
1)
1)
Values
Unit
Min.
Typ.
Qc
–
18
C
–
360
–
–
47
–
–
46
–
5
Note/Test Condition
Max. nC
VR=400 V, di/dt=200A/µs, IF≤IF,MAX, Tj=150°C VR=1 V, f=1 MHz
pF
VR=300 V, f=1 MHz VR=600 V, f=1 MHz
Rev. 2.0, 2015-04-13
5th Generation thinQ!TM SiC Schottky Diode IDW24G65C5B Electrical characteristics diagrams
Electrical characteristics diagrams
5 Table 7
Power dissipation
1)
Maximal diode forward current
1)
100
80
0.1
90
0.3
80
0.5
70
0.7
60
70 60 IF[A]
Ptot[W]
50
1
40
50 40
30
30 20
20
10
10 0
0 25
50
75
100
125
150
25
175
50
75
100
125
150
175
TC[°C]
TC[°C]
IF=f(TC); RthJC,max;Tj≤175°C; parameter D=duty cycle
Ptot=f(TC); RthJC,max Table 8 Typical forward characteristics
1)
Typical forward characteristics in surge current
-55°C
25
1)
120
25°C
100
20 100°C
80 15
IF [A]
IF [A]
-55°C 150°C
10
175°C
60 25°C 100°C
40
5
150°C
20
175°C
0
0 0
1
2
0
3
VF [V]
IF=f(VF); tp=200 µs; parameter: Tj
1)
Per Leg
2)
Per Device
Final Datasheet
1
2
3 VF [V]
4
5
6
IF=f(VF); tp=200 µs; parameter: Tj
6
Rev. 2.0, 2015-04-13
5th Generation thinQ!TM SiC Schottky Diode IDW24G65C5B Electrical characteristics diagrams Table 9 Typ. capacitance charge vs. current slope
1)
Typ. Reverse current vs. reverse voltage
1)
1.E-5
20 18 16
1.E-6
14 175°C IR [A]
QC[nC]
12 10
1.E-7
8
150°C
6
1.E-8
4
100°C
2 0 100
25°C
300
500
700
1.E-9 100
900
200
300
400
-55°C 500
600
VR [V]
dIF/dt [A/µs]
QC=f(diF/dt); Tj=150°C; VR=400 V; IF≤IF,max
IR=f(VR); parameter: Tj
Table 10 Max. transient thermal impedance
1)
Typ. capacitance vs. reverse voltage
1)
500 450 1
400
300
0.5 0.2 0.1 0.05 0.02 0.01 single pulse
0.1
C [pF]
Zth,jc [K/W]
350
250 200 150 100
50 0.01 1.E-06
0 1.E-03
1.E+00
0
Zth,jc=f(tP); parameter: D=tP/T
1)
Per Leg
2)
Per Device
Final Datasheet
1
10
100
1000
VR [V]
tp [s]
C=f(VR); Tj=25°C; f=1 MHz
7
Rev. 2.0, 2015-04-13
5th Generation thinQ!TM SiC Schottky Diode IDW24G65C5B Electrical characteristics diagrams Table 11 Typ. capacitance stored energy
1)
12 10
EC [µJ]
8 6 4 2
0 0
200
400 VR [V]
600
EC=f(VR)
Simplified Forward Characteristics Model
6 Table 12
Equivalent forward current curve
1)
Mathematical Equation
VF VTH RDIFF I F VTH T j 0.001 T j 1.04 V
RDIFF T j 1.07 10- 6 T j 1.07 10- 4 T j 0.039
IF [A]
2
1/Rdiff Vth
VF [V]
VF=f(IF)
1)
Per Leg
2)
Per Device
Final Datasheet
Tj in °C; -55°C < Tj < 175°C; IF < 24 A
8
Rev. 2.0, 2015-04-13
5th Generation thinQ!TM SiC Schottky Diode IDW24G65C5B
Package outlines
Figure 1 1)
Per Leg
2)
Per Device
Final Datasheet
Outlines TO-247, dimensions in mm/inches
9
Rev. 2.0, 2015-04-13
5th Generation thinQ!TM SiC Schottky Diode IDW24G65C5B Revision History
7
Revision History
th
TM
5 Generation thinQ!
SiC Schottky Diode
Revision History: 2015-04-13, Rev. 2.0 Previous Revision: Revision
Subjects (major changes since last version)
2.0
Release of the final datasheet.
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[email protected] Edition 2015-04-13 Published by Infineon Technologies AG 81726 Munich, Germany © 2015 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Final Datasheet
10
Rev. 2.0, 2015-04-13
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Published by Infineon Technologies AG
