USO0RE41980E

(19) United States (12) Reissued Patent

(10) Patent Number: US RE41,980 E (45) Date of Reissued Patent: Dec. 7, 2010

Yabu et a]. (54)

SEMICONDUCTOR INTERCONNECT

FOREIGN PATENT DOCUMENTS

FORMED OVER AN INSULATION AND HAVING MOISTURE RESISTANT MATERIAL

EP EP

0514888 A1 0825646 A2

11/1992 2/1998

(75) Inventors: Toshiki Yabu, Hirakata (JP); Mizuki

Segawa, Hirakata (JP)

(Continued)

(73) Assignee: Panasonic Corporation, Osaka (JP)

OTHER PUBLICATIONS

(21) App1.No.: 11/984,551 (22) Filed:

Construction Analysis, “IBM Power PC 601 RISC Micro

Nov. 19, 2007

processor”, Report Number: SUB 9308%)2 © by Integrated

Circuit Engineering Corporation (ICE).

Related US. Patent Documents

Reissue of:

(64) Patent No.: Issued: Appl. No.: Filed:

6,232,656 May 15, 2001 09/387,834 Sep. 1, 1999

Primary ExamineriThomas L Dickey (74) Attorney, Agent, or FirmiMcDermott Will & Emery LLP

US. Applications:

(57)

(60)

A plurality of metal wires are formed on an underlying inter

Continuation of application No. 10/438,348, ?led on May 15, 2003, now Pat. No. Re. 39,932, which is a division of

application No. 08/925,442, ?led on Sep. 8, 1997, now Pat. No. 5,989,992.

(30)

(52)

(58)

layer insulating ?lm. Areas among the metal wires are ?lled with a buried insulating ?lm of a silicon oxide ?lm with a

US. Cl. ...................... .. 257/690; 257/758; 257/759;

small dielectric constant (i.e., a ?rst dielectric ?lm), and thus, a parasitic capacitance of the metal wires can be decreased. On the buried insulating ?lm, a passivation ?lm of a silicon nitride ?lm with high moisture absorption resis tance (i.e., a second dielectric ?lm) is formed, and thus, a coverage defect can be avoided. A bonding pad is buried in an opening formed in a part of a surface protecting ?lm

257/760; 257/761; 257/762; 257/763; 257/764;

including the buried insulating ?lm and the passivation ?lm,

Foreign Application Priority Data

Sep. 10, 1996

(51)

ABSTRACT

(JP) ........................................... .. 8-239403

Int. Cl. H01L 29/41

(2006.01)

257/765; 257/915

so as not to expose the buried insulating ?lm within the

Field of Classi?cation Search ................ .. 257/690,

opening. Thus, moisture absorption through the opening can

257/773, 758*765, 915 See application ?le for complete search history.

be prevented. In this manner, the invention provides a semi conductor device which has a small parasitic capacitance in

References Cited

an area with a small pitch between the metal wires and is free from a coverage defect as well as the moisture absorption

U.S. PATENT DOCUMENTS

through the opening for the bonding pad, and a method of manufacturing the semiconductor device.

(56)

4,761,386 A

8/1988 Buynoski

(Continued)

34 Claims, 21 Drawing Sheets

15 (BONDING PAD) BURIED

INSULATING

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US RE41,980 E Page 2

US. PATENT DOCUMENTS

6,037,215 A RE39,932 E

5,136,364 A 5,371,047 A 5,399,530 A

8/1992 Byre 12/1994 Greco

3/2000 Lee * 12/2007

Yabu et al. ................ .. 257/690

FOREIGN PATENT DOCUMENTS

3/1995 Kenmotsu

4,444,444 4

44444 44444

g;

5682-333;

gggg;

5,457,073 A

10/1995 Ouellet

JP

62_224037

10/1987

5,554,305 5,572,737 5,731,584 5,746,868 5,785,236 5,804,259 548074787 5,849,632 5,854,127 5,856,707 5,874,779 5,900,668

9/1996 11/1996 3/1998 5/1998 7/1998 9/1998 9/1998 12/1998 12/1998 1/1999 2/1999 5/ 1999

JP JP JP JP JP JP JP JP JP WO

458531 4479246 5_198572 7_312633 6_112265 A 6_318590 07-130737 9_120963 9455554 WO 96/19826

2/1992 6/1992 6/1993 10/1993 4/1994 11/1994 5/1995 2/1997 10/1997 6/1996

A A A A A A A A A A A A

Wojnarowski Valice Beyne Abe Cheung et {11. Robles Fu Tuttle et Pan Sardella Matsuno Wollesen

* cited by examiner

US. Patent

Dec. 7, 2010

Sheet 1 0f 21

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