USO0RE3 8292E
(19) United States (12) Reissued Patent
(10) Patent Number: US RE38,292 E (45) Date of Reissued Patent: Oct. 28, 2003
Satou (54) METHOD TO PREVENT STATIC
5,606,340 5,671,026 5,825,449 5,828,433
DESTRUCTION OF AN ACTIVE ELEMENT COMPRISED IN A LIQUID CRYSTAL DISPLAY DEVICE
A A A A
2/1997 9/1997 10/1998 10/1998
Suzuki et 81. Shiraki et 81. Shin Shin
FOREIGN PATENT DOCUMENTS
(75) Inventor: Takashi Satou, Nagano-ken (JP)
(73) Assignee: Seiko Epson Corporation, Tokyo (JP) (21) Appl. No.: 09/903,639 (22) PCT Filed:
May 30, 1997
(86) PCT No.:
PCT/JP96/02858
§ 371 (6X1), (2), (4) Date:
Webster’s II NeW College Dictionary, Houghton Mif?in, 1995, p. 3 and 764.* * cited by examiner
Primary Examiner—Carl Whitehead, Jr. Assistant Examiner—Laura Schillinger (74) Attorney, Agent, or Firm—Oliff & Berridge, PLC
Related US. Patent Documents Reissue of:
5,930,607 Jul. 27, 1999
(57)
08/849,288 May 30, 1997
ABSTRACT
A liquid crystal display device Which utilizes an active matrix substrate and its substrate, and Which is provided
Foreign Application Priority Data
Oct. 3, 1995
8/1987 3/1988 12/1991 2/1993 6/1993 12/1993 5/1994 7/1994 9/1995
OTHER PUBLICATIONS
PCT Pub. Date: Apr. 10, 1997
(30)
62-187885 63-33130 3-296725 5-27263 5-165059 5-333377 6-148688 6-186592 7-244294
May 30, 1997
(87) PCT Pub. No.: WO97/13177
(64) Patent No.: Issued: Appl. No.: Filed:
JP JP JP JP JP JP JP JP JP
With a novel method of manufacture Which can reduce the
(JP) ........................................... .. 7-279587
manufacturing process of amorphous silicon thin ?lm tran sistors of reverse stagger construction, and an electrostatic
(51)
Int. Cl.7 ..................... .. H01L 21/336; H01L 29/78;
(52)
US. Cl. ......................... .. 438/158; 257/59; 257/72;
(58)
Field of Search ............................... .. 438/149, 151,
G02F 1/13
345/87; 345/90; 345/92; 349/40; 349/43
438/158, 159; 257/57, 59, 72, 356; 345/87, 90, 92, 205; 349/40, 43, 54
protection means Which is created using this method of manufacture. In a thin ?lm transistor manufacturing process, along With forming an aperture for connecting the contact hole and the external terminal in a manufacturing process for a thin ?lm transistor, utilization is made of ITO ?lm as the Wiring. The electrostatic protection means is formed from a
bi-directional diode (electrostatic protection element) Which is composed utilizing an MOS transistor connected betWeen
References Cited
the electrode (PAD) for connecting the external terminal, and the joint electric potential line. The electrostatic protec
U.S. PATENT DOCUMENTS
tion element is substantially a transistor, With great current
(56) 4,778,258 A 5,068,748 A 5,200,876 A
5,219,771 A 5,373,377 A
capacity, and utilizing the TFT formation process of pixel
10/1988 Parks et 81. 11/1991 Ukaietal. 4/1993 Takeda et 81.
components in their existent state, the process can be formed
Without any complications.
6/1993 Miyake
33 Claims, 25 Drawing Sheets
12/1994 Ogawa et al.
PAD COMPONENT
PROTECTIVE ELEMENT
PIXEL COMPONENT
J $46:
minimum 902 740D 9220
920
U.S. Patent
Oct. 28,2003
Sheet 1 0f 25
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Oct. 28,2003
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Oct. 28,2003
Sheet 8 0f 25
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