Mater. Res. Soc. Symp. Proc. Vol. 890 © 2006 Materials Research Society

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Scaled Up Pulsed Deposition Technology: Carburization Resistant Ablation Coatings for Ethylene Pyrolysis Coils Alok Chauhan1, Mir Anwar1, Kelvin Montero1, Henry White1, Weidong Si2, Jianming Bai3 1 Materials Science, Stony Brook University, Stony Brook, NY 11794-2275 2 Condensed Matter Physics and Materials Science, Brookhaven National Laboratory, Upton NY 11973-5000 3 High Temperature Materials Laboratory, Oak Ridge National Laboratory, Oak Ridge, TN 37831-6064 ABSTRACT

Products derived from ethylene have and will continue to replace metallic materials traditionally used for transportation, building materials, and products we use in our everyday lives. As the demand continues to increase, a more suitable material for the outlet coils of ethylene pyrolysis heaters will have to be identified. In this study, we discuss utilization of scaled up pulsed deposition technology to deposit adherent carburization resistant coatings on the inner diameter of ethylene pyrolysis tubing with the intent of extending tube life. Ablation target material selection was based primarily on elevated temperature properties and the ability of the coating to prevent transformation of the inherent protective chromium oxide surface film to metal carbides while in service. The near optimal settings of the processing parameters for pulsed laser deposition of ceramic SiC on heat resistant tubing traditionally used for ethylene service were investigated using a semi quantitative controlled random search methodology. Minimization of the objective function which was based on width, thickness and coverage of the thin film resulted in an optimal deposition time of 4.3 minutes and surface finish of 272 nm.

INTRODUCTION

The origin of pulsed laser deposition technology can be traced back to Smith and Turner [1] who used a ruby laser to deposit thin films on a variety of materials. Twenty five years later, James Greer of Raytheon Co. pioneered the scale up efforts by depositing thin films on the internal surface of a cylindrical cavity [2] and over large areas by either scanning the laser or substrate [3-6]. Rapid advancements in switching technology have led to new developments in this technology. Currently, over 1000 Patents on pulsed laser deposition technology exist. Combinatorial pulsed laser deposition has lately been found to produce highly quality thin films [7]. The idea of depositing adherent thin films on the inner diameter of a cylindrical cavity has sparked our interest and has led us to investigate the use of pulsed laser deposited SiC films as a potential barrier against corrosive environments. Silicon based ceramics have been identified by the Department of Energy as an attractive materials for ethylene pyrolysis tubing due to their high

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thermal conductivity, retention of mechanical properties at operating temperatures, excellent thermal shock resistance and higher temperature capabilities relative to metals and alloys. SiC films deposited by conventional techniques require either a high substrate temperature >1250oC during growth (thermal spray, reactive sputtering [8], radio frequency sputtering [9], and chemical vapor deposition [10-12]) or post deposition annealing (sputtering [13]) to achieve a stoichiometric crystalline structure. Pulsed laser deposition can deposit SiC films at lower temperature.

EXPERIMENTAL DETAILS

Figure 1 shows a schematic of a typical scaled up pulsed laser deposition system used to deposit thin films on the inner diameter of tubing [14].

Figure 1.

Schematic (left) of scaled up pulsed laser deposition system to deposit thin films on the inner surface of a cylinder [14]. Illustration (right) of translation/ rotation stage (as shown in the schematic). A shaft (not shown) which holds both the ablation target and the cylinder feeds through the rotation mechanism (hand) and translation bellows. The bellows is attached to the vacuum chamber. The remaining components as shown in the schematic are commonly found in most pulsed laser deposition systems.

External to the vacuum chamber; the input parameters are laser type, laser energy, pulse length, pulse rate, and laser scan rate (if employed). When the laser enters the vacuum chamber the following internal input parameters become significant: atmosphere (vacuum condition, inert/ active gas, gas pressure), ablation target surface condition, ablation target rotation speed, fluence (energy/ area), ablation target to cylinder inner

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surface angle, ablation target to cylinder inner surface distance, nature of plume (transfer of stoichiometry), cylinder inner surface condition, cylinder temperature, cylinder rotation speed (equals ablation target rotation speed in our experimental setup), cylinder translation speed, and deposition time. The external and internal input parameters play a major role in optimizing the output variables: thickness, static deposition width (plume width) and coverage/ adherence. Near optimal settings for pulsed laser deposition of the tube inner surface processing parameters were determined experimentally (using flat 6.5 mm x 6.5 mm x 1.0 mm coupons) and by using a semi- quantitative controlled random search methodology. Pulsed laser deposition experiments were performed in the Condensed Matter Physics and Materials Science Laboratory at Brookhaven National Laboratory. A Lambda Physik KrF (λ = 248 nm) excimer laser was used to ablate a Hexoloy SA ceramic SiC target and deposit thin films on 25Cr- 20Ni- Fe alloy coupons (removed from tubing supplied by Ultra-cast Inc.). The external input parameters were as follows: laser type, KrF excimer (λ = 248 nm); energy, 500-600 mJ; pulse length, nanosecond; pulse rate, 5-10 Hz; and the scan rate, stationary. The initial laser beam dimensions (v x h, FWHM) were 24 x 6 to 12 mm2 . The pulsed laser deposition system is equipped with optics to scan the laser. Laser scanning is commonly used for larger area deposition [3-6] and to produce composition gradient films to improve adhesion properties [15]. The later is of experiment interest to the authors, but was not employed in this study. The parameters of interest for our experiment are shown in Table I. Table I.

Internal Input Parameters

Atmosphere (argon) ~ 380 mtorr Target rotation speed 10 rpm Target surface condition sintered SiC (grain size < 10 µm) Fluence 140 – 170 mJ/mm2 Target to substrate angle 45o Target to specimen distance 40 mm Nature of plume molecular transfer [16] Substrate surface condition 10 – 400 nm rms Substrate temperature 800o C Substrate rotation speed stationary* Substrate translation speed stationary** Deposition time < 1 hour * For deposition on the inner surface of tubing, the target and cylinder rotation speeds are equivalent ** For a 4 inch cylinder, the translation speed would be ~1.7 mm/ min

DISCUSSION

In this study, a limited number of thin films were deposited on coupons to obtain data for the semi- quantitative controlled random search procedure. The near optimal

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conditions for pulsed laser deposition of thin films on the inner surface of a cylinder can be obtained using the experimental data and the semi- quantitative controlled random search methodology. Details of the controlled random search methodology can be found in the literature [17-19]. Chauhan et al. in an earlier work [20] determined that the surface finish had a significant effect on the adhesion properties. Data such as this is very useful in limiting the number of search parameters in the random search procedure. In this initial study, all parameters were fixed except the deposition time and specimen surface condition and the objective function was formulated using the deposition width, thickness and coverage as shown in figure 2. f = (Wd – W)2 + (Td – T)2 + (Cd – C)2

Figure 2.

(1)

Thin film geometry.

In the object function equation, Wd, Td, and Cd are the desired values and W, T, and C are the values determined experimentally. In this work, the desired values are Wd= 6.5 mm (coupon dimension), Td= 0.1 µm (roughness dependant), and Cd= 1 (where 0 is no coverage and 1 is complete coverage). The input parameter ranges were deposition time 80 to 540 seconds and specimen surface roughness was 10 nm to 400 nm. A set of 5 candidate solutions were randomly selected from our experiments as shown in the table II. Table II.

Initial Candidate Solutions

Experiment Number

Deposition Time(sec.)

Roughness (nm)

1 2 3 4 5

193 323 433 196 416

146 398 395 123 248

Width (mm) 6.5 6.5 6.5 6.5 6.5

Thickness (µm) 0.08 0.13 0.17 0.08 0.17

Coverage (%) 1 1 1 1 1

f 0.0004 0.0009 0.0049 0.0004 0.0049

Based on the initial candidate solutions and experience of the authors [14], the objective function equation is only dependant on the thickness of the deposited film. From the initial candidate solutions the maximum (fM) and lowest (fL) objective functions

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were found during experiments 3 (fM = 0.0049) and 1 (fL =0.0004) respectively. The two initial candidate solutions randomly selected to comprise the simplex are 2 and 5 and thus the simplex is composed of 1, 2, and 5. The initial candidate solution 5 becomes the pole of the simplex and the first centroid (deposition time, 258 seconds; surface roughness, 272 nm; and fP, ~ 0) is calculated from 1 and 2. This solution produces a thin film with a width of 6.5 mm, thickness of 0.1 µm and complete coverage. Since fP is less that fM initial candidate solution 3 is eliminated from the solution set and is replaced by the centroid of the simplex. The methodology is continued until the processing conditions (arbitrary f value) are optimized.

CONCLUSIONS

A semi- quantitative controlled random search methodology is proposed as a method of determining the near- optimal conditions for pulsed laser deposition of a thin film on the inner surface of a cylinder. The objective function was based on the deposited thickness, the width of the deposition and coverage. The input parameters, deposition time and surface condition, were selected because these variables would most likely be controlled during industrial processing.

ACKNOWLEDGEMENTS

This material is based upon work supported by the National Science Foundation under Grant No. 0346947.

REFERENCES

1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11.

H. M. Smith and A. F. Turner, Appl. Optics 4, 147-148 (1965). J. A. Greer and H. J. Van Hook, Mater. Res. Soc. Symp. Proc. 191, 171-176 (1990). J. A. Greer, in Superconductivity and Applications (H. S. Kwok, Y. Kao, and S.D. Shaw, eds.), Plenum, New York 117-126 (1989). J. A. Greer, J. Vac. Sci. Technol. A10(4), 1821-1826 (1992). J. A. Greer, Proc. SPIE 1835, 21-30 (1993). J. A. Greer and H. J. Van Hook, in Proc. SPIE 1377, 79-90 (1990). Q J Wang, K Itaka, H Minami, H Kawaji, H Koinuma, Sci. Technol. Adv. Mat. 5(5-6), 543-547 (2004). A. J. Learn, K. E. Haq, Appl. Phys. Lett. 17, 26-29 (1970). T. Tohda, K. Wasa, S. Hayakawa, J. Electrochem. Soc. 127, 44-47 (1980). A. Addaniano, J. A. Sprague, Appl. Phys. Lett. 44, 525-527 (1984). M. I. Chaudhry, R. L. Wright, J. Mater. Res. 5, 1595-1598 (1990).

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13. 14. 15. 16. 17. 18. 19. 20.

J. A. Powell, D. J. Larkin, L. G. Matus, W. J. Choyke, J. L. Bradshaw, L. Henderson, M. Yoganathan, J. Yang, P. Pirouz, Appl. Phys. Lett. 56, 14421444 (1990). I. Berman, R. C. Marshall, C. E. Ryan, Air Force Cambridge Research Laboratories, Technical Report No. 74-0485, (1974). J. A. Greer, in Pulsed Laser Deposition of Thin Films (D. B. Chrisey and G. K. Hubler, eds.), John Wiley & Sons, Inc. New York, 308 (1994). Q. R. Hou, J. Gao, and S. J. Li, Appl Phys A, 67, 369 (1998). D. W. Bonnell, P. K. Schenck, J. W. Hastie, and M. Joseph, in Proc. Symp. on High Temp. Chemistry, Electrochemical Society, NJ (1990). W. L. Price, J. Optimiz. Theory App. 74 (3), 333-348 (1983). W. L. Price, The Computer Journal 20 (4), 367-370 (1977). D. Kim, M. Kang, and S. Rhee, Weld. J. 8, 125s-130s (2005). A. Chauhan, W. Moran, S. Ge, W. Si, and H. White, Scripta Mater. 52, 735738 (2005).

Scaled Up Pulsed Deposition Technology ...

Mir Anwar. 1. , Kelvin Montero. 1. , Henry White. 1. , Weidong Si. 2. , Jianming. Bai. 3. 1. Materials Science, Stony Brook University, Stony Brook, NY 11794-2275. 2. Condensed Matter Physics and Materials Science, Brookhaven National Laboratory,. Upton NY 11973-5000. 3. High Temperature Materials Laboratory, Oak ...

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