N-Channel Dual CoolTM PowerTrench® SyncFETTM 25 V, 49 A, 1.95 mΩ Features
General Description
Dual CoolTM Top Side Cooling PQFN package
SyncFET Schottky Body Diode
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance. This device has the added benefit of an efficient monolithic Schottky body diode.
RoHS Compliant
Applications
Max rDS(on) = 1.95 mΩ at VGS = 10 V, ID = 28 A Max rDS(on) = 2.85 mΩ at VGS = 4.5 V, ID = 22 A High performance technology for extremely low rDS(on)
Synchronous Rectifier for DC/DC Converters Telecom Secondary Side Rectification High End Server/Workstation Vcore Low Side Pin 1
S
S
S G
D
D
D
D
Power 56
Top
D
5
4 G
D
6
3
D
7
2 S
D
8
1
S
S
Bottom
MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS
Drain to Source Voltage
Parameter
VGS
Gate to Source Voltage Drain Current
ID
(Note 4)
-Continuous (Package limited)
TC = 25 °C
-Continuous (Silicon limited)
TC = 25 °C
-Continuous
TA = 25 °C
Ratings 25
Units V
±20
V
49 163 (Note 1a)
-Pulsed
34
A
200
EAS
Single Pulse Avalanche Energy
(Note 3)
144
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 5)
1.9
V/ns
(Note 1a)
3.3
PD TJ, TSTG
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
78
Operating and Storage Junction Temperature Range
-55 to +150
W °C
Thermal Characteristics RθJC
Thermal Resistance, Junction to Case
(Top Source)
3.5
RθJC
Thermal Resistance, Junction to Case
(Bottom Drain)
1.6
RθJA
Thermal Resistance, Junction to Ambient
(Note 1a)
38
RθJA
Thermal Resistance, Junction to Ambient
(Note 1b)
81
RθJA
Thermal Resistance, Junction to Ambient
(Note 1i)
16
RθJA
Thermal Resistance, Junction to Ambient
(Note 1j)
23
RθJA
Thermal Resistance, Junction to Ambient
(Note 1k)
11
°C/W
Package Marking and Ordering Information Device Marking 2508S
Device FDMS2508SDC
©2010 Fairchild Semiconductor Corporation FDMS2508SDC Rev.C1
Package Dual CoolTM Power 56 1
Reel Size 13’’
Tape Width 12 mm
Quantity 3000 units www.fairchildsemi.com
FDMS2508SDC N-Channel Dual CoolTM PowerTrench® SyncFETTM
July 2013
FDMS2508SDC
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics BVDSS
Drain to Source Breakdown Voltage
ID = 1 mA, VGS = 0 V
ΔBVDSS ΔTJ
Breakdown Voltage Temperature Coefficient
25
V
ID = 10 mA, referenced to 25 °C
IDSS
Zero Gate Voltage Drain Current
VDS = 20 V, VGS = 0 V
500
μA
IGSS
Gate to Source Leakage Current, Forward
VGS = 20 V, VDS = 0 V
100
nA
3.0
V
22
mV/°C
On Characteristics VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 1 mA
ΔVGS(th) ΔTJ
Gate to Source Threshold Voltage Temperature Coefficient
ID = 10 mA, referenced to 25 °C
rDS(on)
Static Drain to Source On Resistance
gFS
Forward Transconductance
1.2
1.7 -5
mV/°C
VGS = 10 V, ID = 28 A
1.6
1.95
VGS = 4.5 V, ID = 22 A
2.3
2.85
VGS = 10 V, ID = 28 A, TJ = 125 °C
2.4
3.0
VDS = 5 V, ID = 28 A
170
mΩ S
Dynamic Characteristics Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
VDS = 13 V, VGS = 0 V, f = 1 MHz
3392
4515
pF
912
1215
pF
172
260
pF
1.2
2.1
Ω
Switching Characteristics td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Qg
Total Gate Charge
Qg
Total Gate Charge
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller” Charge
14
25
ns
5.9
12
ns
34
55
ns
4
10
ns
VGS = 0 V to 10 V
49
69
nC
VGS = 0 V to 4.5 V VDD = 13 V, ID = 28 A
22
32
VDD = 13 V, ID = 28 A, VGS = 10 V, RGEN = 6 Ω
nC
9.9
nC
5.3
nC
Drain-Source Diode Characteristics VSD
Source to Drain Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
©2010 Fairchild Semiconductor Corporation FDMS2508SDC Rev.C1
VGS = 0 V, IS = 2 A
(Note 2)
0.43
0.8
VGS = 0 V, IS = 28 A
(Note 2)
0.78
1.2
28
45
ns
27
43
nC
IF = 28 A, di/dt = 300 A/μs
2
V
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FDMS2508SDC N-Channel Dual CoolTM PowerTrench® SyncFETTM
Electrical Characteristics TJ = 25 °C unless otherwise noted
RθJC
Thermal Resistance, Junction to Case
(Top Source)
3.5
RθJC
Thermal Resistance, Junction to Case
(Bottom Drain)
1.6
RθJA
Thermal Resistance, Junction to Ambient
(Note 1a)
38
RθJA
Thermal Resistance, Junction to Ambient
(Note 1b)
81
RθJA
Thermal Resistance, Junction to Ambient
(Note 1c)
27
RθJA
Thermal Resistance, Junction to Ambient
(Note 1d)
34
RθJA
Thermal Resistance, Junction to Ambient
(Note 1e)
16
RθJA
Thermal Resistance, Junction to Ambient
(Note 1f)
19
RθJA
Thermal Resistance, Junction to Ambient
(Note 1g)
26
RθJA
Thermal Resistance, Junction to Ambient
(Note 1h)
61
RθJA
Thermal Resistance, Junction to Ambient
(Note 1i)
16
RθJA
Thermal Resistance, Junction to Ambient
(Note 1j)
23
RθJA
Thermal Resistance, Junction to Ambient
(Note 1k)
11
RθJA
Thermal Resistance, Junction to Ambient
(Note 1l)
13
°C/W
NOTES: 1. RθJA is determined with the device mounted on a FR-4 board using a specified pad of 2 oz copper as shown below. RθJC is guaranteed by design while RθCA is determined by the user's board design.
b. 81 °C/W when mounted on a minimum pad of 2 oz copper
a. 38 °C/W when mounted on a 1 in2 pad of 2 oz copper
c. Still air, 20.9x10.4x12.7mm Aluminum Heat Sink, 1 in2 pad of 2 oz copper d. Still air, 20.9x10.4x12.7mm Aluminum Heat Sink, minimum pad of 2 oz copper e. Still air, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, 1 in2 pad of 2 oz copper f. Still air, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, minimum pad of 2 oz copper g. 200FPM Airflow, No Heat Sink,1 in2 pad of 2 oz copper h. 200FPM Airflow, No Heat Sink, minimum pad of 2 oz copper i. 200FPM Airflow, 20.9x10.4x12.7mm Aluminum Heat Sink, 1 in2 pad of 2 oz copper j. 200FPM Airflow, 20.9x10.4x12.7mm Aluminum Heat Sink, minimum pad of 2 oz copper k. 200FPM Airflow, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, 1 in2 pad of 2 oz copper l. 200FPM Airflow, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, minimum pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. 3. EAS of 144 mJ is based on starting TJ = 25 °C, L = 1 mH, IAS = 17 A, VDD = 23 V, VGS = 10 V. 100% test at L = 0.3 mH, IAS = 25 A. 4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse ocurrence only. No continuous rating is implied. 5. ISD ≤ 28 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, Starting TJ = 25 oC.
©2010 Fairchild Semiconductor Corporation FDMS2508SDC Rev.C1
3
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FDMS2508SDC N-Channel Dual CoolTM PowerTrench® SyncFETTM
Thermal Characteristics
8 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX
VGS = 10 V
135
NORMALIZED DRAIN TO SOURCE ON-RESISTANCE
ID, DRAIN CURRENT (A)
180
VGS = 4.5 V VGS = 3.5 V
VGS = 3 V
90
45
VGS = 2.7 V 0 0
1
2
3
4
6
VGS = 3 V
4 VGS = 3.5 V
2
VGS = 4.5 V VGS = 10 V
0
5
0
45 90 ID, DRAIN CURRENT (A)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On Region Characteristics
180
8 ID = 28 A VGS = 10 V
1.4
rDS(on), DRAIN TO
1.3 1.2 1.1 1.0 0.9 0.8 -75
SOURCE ON-RESISTANCE (mΩ)
NORMALIZED DRAIN TO SOURCE ON-RESISTANCE
135
Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage
1.5
PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX
6
4 TJ = 125 oC
2 TJ = 25 oC
2
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC)
IS, REVERSE DRAIN CURRENT (A)
135 VDS = 5 V oC
90 TJ = 25 oC
45 TJ = -55 oC
1.5
2.0
2.5
3.0
3.5
6
8
10
Figure 4. On-Resistance vs Gate to Source Voltage
PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX
TJ = 125
4
VGS, GATE TO SOURCE VOLTAGE (V)
180
0 1.0
ID = 28 A
0 -50
Figure 3. Normalized On Resistance vs Junction Temperature
ID, DRAIN CURRENT (A)
PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX
VGS = 2.7 V
200 100
VGS = 0 V
10
TJ = 125 oC
1
TJ = 25 oC TJ = -55 oC
0.1
0.01 0.0
4.0
0.2
0.4
0.6
0.8
1.0
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward Voltage vs Source Current
©2010 Fairchild Semiconductor Corporation FDMS2508SDC Rev.C1
4
1.2
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FDMS2508SDC N-Channel Dual CoolTM PowerTrench® SyncFETTM
Typical Characteristics TJ = 25 °C unless otherwise noted
5000 ID = 28A
Ciss
8 CAPACITANCE (pF)
VGS, GATE TO SOURCE VOLTAGE (V)
10
VDD = 13 V
6 VDD = 10 V
VDD = 16 V
4
1000 Coss
2
f = 1 MHz VGS = 0 V
0 0
10
20
30
40
Crss
100 0.1
50
1
10
30
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs Drain to Source Voltage 200
50
o
TJ =
10
ID, DRAIN CURRENT (A)
IAS, AVALANCHE CURRENT (A)
RθJC = 1.6 C/W
25 oC TJ = 100 oC
TJ = 125 oC
VGS = 10 V
150
100
VGS = 4.5 V
50 Limited by package
1 0.01
0.1
1
10
100
0 25
1000
50
150
10000 P(PK), PEAK TRANSIENT POWER (W)
100 ID, DRAIN CURRENT (A)
125
Figure 10. Maximum Continuous Drain Current vs Case Temperature
500
1 ms
10
10 ms THIS AREA IS LIMITED BY rDS(on)
100 ms 1s
SINGLE PULSE TJ = MAX RATED
10 s
RθJA = 81 oC/W
DC
TA = 25 oC
0.01 0.01
0.1
1
10
100 200
VDS, DRAIN to SOURCE VOLTAGE (V)
o
RθJA = 81 C/W o
TA = 25 C
100
10
1 0.5 -4 10
-3
10
-2
10
-1
10
1
100
10
1000
t, PULSE WIDTH (sec)
Figure 11. Forward Bias Safe Operating Area
©2010 Fairchild Semiconductor Corporation FDMS2508SDC Rev.C1
SINGLE PULSE
1000
100 us
0.1
100 o
Figure 9. Unclamped Inductive Switching Capability
1
75
TC, CASE TEMPERATURE ( C)
tAV, TIME IN AVALANCHE (ms)
Figure 12. Single Pulse Maximum Power Dissipation
5
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FDMS2508SDC N-Channel Dual CoolTM PowerTrench® SyncFETTM
Typical Characteristics TJ = 25 °C unless otherwise noted
2
NORMALIZED THERMAL IMPEDANCE, ZθJA
1
0.1
DUTY CYCLE-DESCENDING ORDER
D = 0.5 0.2 0.1 0.05 0.02 0.01
PDM
t1
0.01
t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA
SINGLE PULSE o
RθJA = 81 C/W
0.001 -4 10
-3
10
-2
10
-1
10
1
10
100
1000
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
©2010 Fairchild Semiconductor Corporation FDMS2508SDC Rev.C1
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FDMS2508SDC N-Channel Dual CoolTM PowerTrench® SyncFETTM
Typical Characteristics TJ = 25 °C unless otherwise noted
SyncFET Schottky body diode Characteristics Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device.
Fairchild’s SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 14 shows the reverse recovery characteristic of the FDMS2508SDC.
-2
IDSS, REVERSE LEAKAGE CURRENT (A)
30 25
CURRENT (A)
20 di/dt = 300 A/μs
15 10 5 0 -5 0
50
100
150
200
TIME (ns)
TJ = 125 oC -3
10
TJ = 100 oC -4
10
-5
10
TJ = 25 oC
-6
10
0
5
10
15
20
25
VDS, REVERSE VOLTAGE (V)
Figure 14. FDMS2508SDC SyncFET body diode reverse recovery characteristic
©2010 Fairchild Semiconductor Corporation FDMS2508SDC Rev.C1
10
Figure 15. SyncFET body diode reverse leakage versus drain-source voltage
7
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FDMS2508SDC N-Channel Dual CoolTM PowerTrench® SyncFETTM
Typical Characteristics (continued)
FDMS2508SDC N-Channel Dual CoolTM PowerTrench® SyncFETTM
Dimensional Outline and Pad Layout
©2010 Fairchild Semiconductor Corporation FDMS2508SDC Rev.C1
8
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tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user.
2.
A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
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Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I64
©2010 Fairchild Semiconductor Corporation FDMS2508SDC Rev.C1
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FDMS2508SDC N-Channel Dual CoolTM PowerTrench® SyncFETTM
TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 2Cool™ Sync-Lock™ FPS™ ® AccuPower™ F-PFS™ ®* ® ® ® PowerTrench AX-CAP * FRFET SM Global Power Resource PowerXS™ BitSiC™ TinyBoost™ Programmable Active Droop™ Green Bridge™ Build it Now™ TinyBuck™ QFET® Green FPS™ CorePLUS™ TinyCalc™ Green FPS™ e-Series™ QS™ CorePOWER™ TinyLogic® Gmax™ CROSSVOLT™ Quiet Series™ TINYOPTO™ GTO™ CTL™ RapidConfigure™ TinyPower™ IntelliMAX™ Current Transfer Logic™ ™ TinyPWM™ ® ISOPLANAR™ DEUXPEED TinyWire™ Marking Small Speakers Sound Louder Saving our world, 1mW/W/kW at a time™ Dual Cool™ TranSiC® and Better™ EcoSPARK® SignalWise™ TriFault Detect™ MegaBuck™ EfficentMax™ SmartMax™ TRUECURRENT®* MICROCOUPLER™ ESBC™ SMART START™ μSerDes™ MicroFET™ Solutions for Your Success™ ® MicroPak™ SPM® MicroPak2™ STEALTH™ Fairchild® UHC® SuperFET® MillerDrive™ Fairchild Semiconductor® Ultra FRFET™ SuperSOT™-3 MotionMax™ FACT Quiet Series™ UniFET™ SuperSOT™-6 mWSaver™ FACT® VCX™ SuperSOT™-8 OptoHiT™ FAST® VisualMax™ SupreMOS® OPTOLOGIC® FastvCore™ VoltagePlus™ OPTOPLANAR® SyncFET™ FETBench™ XS™
