DISCRETE SEMICONDUCTORS

DATA SHEET book, halfpage

M3D186

PSS9015B PNP general purpose transistor Product specification Supersedes data of 2002 Sep 20

2004 Aug 10

Philips Semiconductors

Product specification

PNP general purpose transistor

PSS9015B

FEATURES

PINNING

• Low collector capacitance.

PIN

DESCRIPTION

1

collector

APPLICATIONS

2

base

• General purpose switching and amplification

3

emitter

• Low frequency, low noise amplifier. DESCRIPTION handbook, halfpage

PNP transistor in a SOT54 plastic package. NPN complement: PSS9014.

1

2 3

MSB033

MARKING TYPE NUMBER

MARKING CODE

PSS9015B

Fig.1 Simplified outline (SOT54).

S9015B

LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VCBO

collector-base voltage

open emitter



−50

V

VCEO

collector-emitter voltage

open base



−45

V

VEBO

emitter-base voltage

open collector



−5

V

IC

collector current (DC)



−100

mA

ICM

peak collector current



−200

mA

IBM

peak base current



−200

mA

Ptot

total power dissipation



500

mW

Tstg

storage temperature

−65

+150

°C

Tj

junction temperature



150

°C

Tamb

operating ambient temperature

−65

+150

°C

up to Tamb = 25 °C; note 1

Note 1. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint.

2004 Aug 10

2

Philips Semiconductors

Product specification

PNP general purpose transistor

PSS9015B

THERMAL CHARACTERISTICS SYMBOL Rth j-a

PARAMETER thermal resistance from junction to ambient

CONDITIONS

VALUE

UNIT

240

K/W

in free air; note 1

Note 1. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO

PARAMETER collector-base cut-off current

CONDITIONS

MIN.

TYP.

MAX.

UNIT

VCB = −30 V; IE = 0





−50

nA

VCB = −30 V; IE = 0; Tamb = 150 °C





−5

µA

ICEO

collector-emitter cut-off current

VCE = −30 V; IB = 0





−100

nA

IEBO

emitter-base cut-off current

VEB = −5 V; IC = 0





−100

nA

hFE

DC current gain

IC = −1 mA; VCE = −5 V

100

200

300

VCEsat

saturation voltage

IC = −100 mA; IB = −5 mA; note 1





−700

VBEsat

saturation voltage

IC = −100 mA; IB = −5 mA; note 1





−1000 mV

VBEon

base-emitter turn-on voltage

IC = −2 mA; VCE = −5 V

−600



−750

mV

fT

transition frequency

IC = −10 mA; VCE = −10 V; f = 100 MHz

100





MHz

Cc

collector capacitance

VCB = −10 V; IE = Ie = 0; f = 1 MHz





7

pF

F

noise figure

VCE = −5 V; IC = −0.2 mA; RS = 1 kΩ; f = 1 kHz; B = 200 Hz





10

dB

Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.

2004 Aug 10

3

mV

Philips Semiconductors

Product specification

PNP general purpose transistor

PSS9015B

MLD931

103 handbook, halfpage

VCEsat

h FE

(mV)

102

−103

10

−102

1 −10−2

−10−1

−1

−10

−10 −10−2

−102 −103 IC (mA)

VCE = −5 V.

IC/IB = 20.

Fig.2

Fig.3

DC current gain as a function of collector current; typical values.

MLD933

−104 handbook, halfpage

−10−1

−1

−10

−102 −103 IC (mA)

Collector-emitter saturation voltage as a function of collector current; typical values.

MLD934

−104 handbook, halfpage

VBEsat

VBE (mV)

(mV) −103

−103

−102

−102

−10 −10−1

−1

−10

−102

IC (mA)

−10 −10−2

−103

−10−1

−1

−10

−102 −103 IC (mA)

VCE = −5 V.

IC/IB = 20.

Fig.4

MLD932

−104 handbook, halfpage

Base-emitter saturation voltage as a function of collector current; typical values.

2004 Aug 10

Fig.5

4

Base-emitter voltage as a function of collector current; typical values.

Philips Semiconductors

Product specification

PNP general purpose transistor

PSS9015B

PACKAGE OUTLINE Plastic single-ended leaded (through hole) package; 3 leads

SOT54

c

E d

A

L b

1 e1

2

D

e

3 b1

L1

0

2.5

5 mm

scale

DIMENSIONS (mm are the original dimensions) UNIT

A

b

b1

c

D

d

E

mm

5.2 5.0

0.48 0.40

0.66 0.55

0.45 0.38

4.8 4.4

1.7 1.4

4.2 3.6

e 2.54

e1

L

L1(1)

1.27

14.5 12.7

2.5

max.

Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION SOT54

2004 Aug 10

REFERENCES IEC

JEDEC

JEITA

TO-92

SC-43A

5

EUROPEAN PROJECTION

ISSUE DATE 97-02-28 04-06-28

Philips Semiconductors

Product specification

PNP general purpose transistor

PSS9015B

DATA SHEET STATUS LEVEL

DATA SHEET STATUS(1)

PRODUCT STATUS(2)(3) Development

DEFINITION

I

Objective data

II

Preliminary data Qualification

This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product.

III

Product data

This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN).

Production

This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice.

Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS

DISCLAIMERS

Short-form specification  The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook.

Life support applications  These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application.

Limiting values definition  Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Right to make changes  Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.

Application information  Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification.

2004 Aug 10

6

Philips Semiconductors – a worldwide company

Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: [email protected].

SCA76

© Koninklijke Philips Electronics N.V. 2004

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.

Printed in The Netherlands

R75/02/pp7

Date of release: 2004

Aug 10

Document order number:

9397 750 13687

This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.

Transistor CS9015.pdf

Page 2 of 8. 2004 Aug 10 2. Philips Semiconductors Product specification. PNP general purpose transistor PSS9015B. FEATURES. • Low collector capacitance. APPLICATIONS. • General purpose switching and amplification. • Low frequency, low noise amplifier. DESCRIPTION. PNP transistor in a SOT54 plastic package.

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