MIXA 101W1200EH

Six-Pack XPT IGBT

VCES = 1200 V IC25 = 155 A VCE(sat) = 1.8 V

Part name (Marking on product) MIXA101W1200EH

13, 21

1

T1

D1 5

2

T2

D2 9

6

T3

D3

10 19 17 15

D4 3

T4

4

D5 7

T5

8

E72873

D6 11

T6

12

14, 20

Features:

Application:

Package:

• Easy paralleling due to the positive temperature coefficient of the on-state voltage • Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec. - very low gate charge - square RBSOA @ 3x IC - low EMI • Thin wafer technology combined with the XPT design results in a competitive low VCE(sat) • SONIC™ diode - fast and soft reverse recovery - low operating forward voltage

• AC motor drives • Solar inverter • Medical equipment • Uninterruptible power supply • Air-conditioning systems • Welding equipment • Switched-mode and resonant-mode power supplies

• "E3-Pack" standard outline • Insulated copper base plate • Soldering pins for PCB mounting • Optimizes pin layout

IXYS reserves the right to change limits, test conditions and dimensions.

© 2011 IXYS All rights reserved

20110715a

1-6

MIXA 101W1200EH Ouput Inverter T1 - T6 Ratings Symbol

Definitions

Conditions

VCES

collector emitter voltage



VGES VGEM

max. DC gate voltage max. transient collector gate voltage

continuous transient

IC25 IC80

collector current



Ptot

total power dissipation

VCE(sat)

min.

typ.

max.

Unit

1200

V

±20 ±30

V V

TC = 25°C TC = 80°C

155 108

A A



TC = 25°C

500

W

collector emitter saturation voltage

IC = 100 A; VGE = 15 V

TVJ = 25°C TVJ = 125°C

1.8 2.1

2.1

V V

VGE(th)

gate emitter threshold voltage

IC = 4 mA; VGE = VCE

TVJ = 25°C

6.0

6.5

V

ICES

collector emitter leakage current

VCE = VCES; VGE = 0 V

TVJ = 25°C TVJ = 125°C

0.03 0.6

0.3

mA mA

IGES

gate emitter leakage current

VGE = ±20 V

500

nA

QG(on)

total gate charge

VCE = 600 V; VGE = 15 V; IC = 100 A

295

nC

td(on) tr td(off) tf Eon Eoff

turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse

inductive load VCE = 600 V; IC = 100 A VGE = ±15 V; RG = 7 W

TVJ = 125°C

70 40 250 100 8.5 11

ns ns ns ns mJ mJ

RBSOA

reverse bias safe operating area

VGE = ±15 V; RG = 7 W;

TVJ = 125°C VCEK = 1200 V

SCSOA tSC ISC

short circuit safe operating area short circuit duration short circuit current

VCE = 900 V; VGE = ±15 V; RG = 7 W; non-repetitive

RthJC

thermal resistance junction to case

(per IGBT)

TVJ = 25°C

5.4

TVJ = 125°C

300

A

10

µs A

0.25

K/W

400

Output Inverter D1 - D6 Ratings Symbol

Definitions

Conditions

VRRM

max. repetitve reverse voltage



IF25 IF80

forward current

VF

forward voltage

Qrr IRM trr Erec

reverse recovery charge max. reverse recovery current reverse recovery time reverse recovery energy

VR = 600 V diF /dt = -1600 A/µs IF = 100 A; VGE = 0 V

RthJC

thermal resistance junction to case

(per diode)

min.

typ.

max.

Unit

TVJ = 25°C

1200

V



TC = 25°C TC = 80°C

135 90

A A

IF = 100 A; VGE = 0 V

TVJ = 25°C TVJ = 125°C

1.95 1.95

2.2

V V

TVJ = 125°C

12.5 100 350 4

µC A ns mJ 0.4

K/W

TC = 25°C unless otherwise stated

IXYS reserves the right to change limits, test conditions and dimensions.

© 2011 IXYS All rights reserved

20110715a

2-6

MIXA 101W1200EH Module Ratings Symbol

Definitions

TVJ TVJM Tstg

operating temperature max. virtual junction temperature storage temperature

VISOL

isolation voltage

CTI

comparative tracking index

Md

mounting torque (M5)

dS dA

creep distance on surface strike distance through air

Rpin-chip

resistance pin to chip

RthCH

thermal resistance case to heatsink

Conditions

min.

typ.

-40 -40 IISOL < 1 mA; 50/60 Hz

max.

Unit

125 150 125

°C °C °C

3000

V~

200 3

6

10 7.5 with heatsink compound

Weight

Nm mm mm

2.5

mW

0.02

K/W

300

g

Equivalent Circuits for Simulation I V0

Symbol V0 R0 V0 R0

R0

Definitions IGBT

Conditions T1 - T6

min. TVJ = 150°C

free wheeling diode

D1 - D6

TVJ = 150°C

Ratings typ. max. 1.1 13.8

Unit V mW

1.25 8.5

V mW

TC = 25°C unless otherwise stated

IXYS reserves the right to change limits, test conditions and dimensions.

© 2011 IXYS All rights reserved

20110715a

3-6

MIXA 101W1200EH Circuit Diagram 13, 21

2D Data Matrix FOSS-ID 6 digits T1

1

D1 5

2

T2

D2 9

6

T3

D3

XXX XX-XXXXX

Logo

Part name

10 19 17 15

D4 T4

3

D5 7

T5

8

4

Prod.Index

Date Code

Part number M = Module I = IGBT X = XPT A = standard 101 = Current Rating [A] W = Six-Pack 1200 = Reverse Voltage [V] EH = E3-Pack

D6 11

YYCWx

T6

12

14, 20

Outline Drawing

Dimensions in mm (1 mm = 0.0394“)

Product Marking Ordering

Part Name

Marking on Product

Standard

MIXA101W1200EH

MIXA101W1200EH

IXYS reserves the right to change limits, test conditions and dimensions.

© 2011 IXYS All rights reserved

Delivering Mode Base Qty Ordering Code Box

5

511591

20110715a

4-6

MIXA 101W1200EH Transistor T1 - T6 200

200 VGE = 15 V

150

IC

TVJ = 25°C

IC TVJ = 125°C

[A]

TVJ = 125°C 100

[A]

50

9V

50

0

1

2

0

3

0

1

2

20

IC = 100 A VCE = 600 V

180 160

15

140

IC 120

VGE

100

10

[V]

80 60

5

40

TVJ = 125°C

20

TVJ = 25°C 5

6

7

8

9

10

11

12

0

13

0

VGE [V]

20

16 RG = 6.8 Ω VCE = 600 V VGE = ±15 V TVJ = 125°C

18 16 14

100

E

10

[mJ] 8

[mJ]

12

400

Eoff

10

Eoff

4

300

IC = 100 A VCE = 600 V VGE = ±15 V TVJ = 125°C

14

12

6

200

QG [nC] Fig. 4 Typ. turn-on gate charge

Fig. 3 Typ. tranfer characteristics

E

4

Fig. 2 Typ. output characteristics

200

0

3

VCE [V]

VCE [V] Fig. 1 Typ. output characteristics

[A]

11 V

150

100

0

13 V

VGE = 15 V 17 V 19 V

Eon

Eon

8

2 0

0

40

80

120

160

200

IC [A] Fig. 5 Typ. switching energy vs. collector current IXYS reserves the right to change limits, test conditions and dimensions.

© 2011 IXYS All rights reserved

6

0

4

8

12

16

20

24

RG [Ω] Fig. 6 Typ. switching energy vs. gate resistance 20110715a

5-6

MIXA 101W1200EH Inverter D1 - D6 200

24

TVJ = 125°C VR = 600 V

20

150

200 A

Qrr 16

IF 100

[A]

100 A

[µC] 12 TVJ = 125°C

50

TVJ = 25°C

0 0.0

0.5

1.0

50 A

8

1.5

2.0

2.5

4 1000

3.0

1200

1400

160

2000

2200

700 TVJ = 125°C

140

[A]

1800

Fig. 8 Typ. reverse recov.charge Qrr vs. di/dt

Fig. 7 Typ. Forward current versus VF

IRM

1600

diF /dt [A/µs]

VF [V]

200 A

600

100 A

500

VR = 600 V

120

trr

50 A

100

TVJ = 125°C VR = 600 V

200 A

400

[ns] 300 80

100 A

200

60

50 A

100

40 1000

1200

1400

1600

1800

2000

0 1000

2200

1200

1400

1600

1800

2000

2200

diF /dt [A/µs]

diF /dt [A/µs] Fig. 9 Typ. peak reverse current IRM vs. di/dt

Fig. 10 Typ. recovery time trr versus di/dt 1

8 200 A

TVJ = 125°C VR = 600 V

Diode

6

IGBT

100 A

Erec

ZthJC 0.1

4

[mJ]

50 A

IGBT

[K/W]

1 2 3 4

2

0 1000

1200

1400

1600

1800

2000

2200

diF /dt [A/µs] Fig. 11 Typ. recovery energy Erec versus di/dt IXYS reserves the right to change limits, test conditions and dimensions.

© 2011 IXYS All rights reserved

0.01 0.001

0.01

FRD

Ri

ti

Ri

ti

0.05 0.035 0.12 0.045

0.002 0.03 0.03 0.08

0.092 0.067 0.155 0.086

0.002 0.03 0.03 0.08

0.1

1

10

tp [s] Fig. 12 Typ. transient thermal impedance 20110715a

6-6