VRF151G 50V, 300W, 175MHz
RF POWER VERTICAL MOSFET The VRF151G is designed for broadband commercial and military applications at frequencies to 175MHz. The high power, high gain, and broadband performance of this device make possible solid state transmitters for FM broadcast or TV channel frequency bands.
FEATURES • Improved Ruggedness V(BR)DSS = 170V
• 5:1 Load VSWR Capability at Specified Operating Conditions
• 300W with 16dB Typical Gain @ 175MHz, 50V
• Nitride Passivated
• Excellent Stability & Low IMD
• Refractory Gold Metallization
• Common Source Configuration
• High Voltage Replacement for MRF151G
• RoHS Compliant
Maximum Ratings Symbol VDSS ID
All Ratings: TC =25°C unless otherwise specified
Parameter Drain-Source Voltage
VRF151G
Unit
170
V
Continuous Drain Current @ TC = 25°C
36
A
VGS
Gate-Source Voltage
±40
V
PD
Total Device dissipation @ TC = 25°C
500
W
TSTG TJ
Storage Temperature Range
-65 to 150
Operating Junction Temperature
°C
200
Static Electrical Characteristics Symbol
Parameter
Min
Typ
V(BR)DSS
Drain-Source Breakdown Voltage (VGS = 0V, ID = 100mA)
170
180
VDS(ON)
On State Drain Voltage (ID(ON) = 10A, VGS = 10V)
2.0
Max
3.0
Unit V
IDSS
Zero Gate Voltage Drain Current (VDS = 100V, VGS = 0V)
IGSS
Gate-Source Leakage Current (VDS = ±20V, VDS = 0V)
gfs
Forward Transconductance (VDS = 10V, ID = 10A)
5.0
VGS(TH)
Gate Threshold Voltage (VDS = 10V, ID = 100mA)
2.9
3.6
4.4
V
Min
Typ
Max
Unit
0.35
°C/W
1.0 1.0
mA μA mhos
Symbol RθJC
Characteristic Junction to Case Thermal Resistance
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
050-4938 Rev G 11-2009
Thermal Characteristics
Dynamic Characteristics Symbol
VRF151G
Parameter
Test Conditions
Min
Typ
CISS
Input Capacitance
VGS = 0V
375
Coss
Output Capacitance
VDS = 50V
200
Crss
Reverse Transfer Capacitance
f = 1MHz
12
Max
Unit
pF
Functional Characteristics Symbol
Min
Typ
GPS
f = 175MHz,- VDD = 50V, IDQ = 500mA, Pout = 300W
Parameter
14
16
Max
dB
ηD
f = 175MHz, VDD = 50V, IDQ = 500mA, Pout = 300W
50
55
%
ψ
f = 175MHz, VDD = 50V, IDQ = 500mA, Pout = 300W 5:1VSWR - All Phase Angles
No Degradation in Output Power
1. To MIL-STD-1311 Version A, test method 2204B, Two Tone, Reference Each Tone Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Typical Performance Curves 30
25
ID, DRAIN CURRENT (A)
20
TJ= -55°C
7V
15
6V
10
5V
5
250μs PULSE TEST<0.5 % DUTY CYCLE
25
10V 9V 8V ID, DRAIN CURRENT (A)
14V
20 TJ= 25°C 15 TJ= 125°C 10 5
VGS = 4V 0
0 V
5
10
15
20
0
25
0
, DRAIN-TO-SOURCE VOLTAGE (V) FIGURE 1, Output Characteristics
2
4
6
8
10
12
VGS, GATE-TO-SOURCE VOLTAGE (V) FIGURE 2, Transfer Characteristics
DS(ON)
1.0E−9
100
ID, DRAIN CURRENT (A)
C, CAPACITANCE (F)
Ciss Coss
1.0E−10
IDMax
10 Rds(on) PD Max
TJ = 125°C TC = 75°C
Crss
050-4938 Rev G 11-2009
1.0E−11
0
10
20
30
40
50
60
VDS, DRAIN-TO-SOURCE VOLTAGE (V) FIGURE 3, Capacitance vs Drain-to-Source Voltage
1
1
10
100
250
VDS, DRAIN-TO-SOURCE VOLTAGE (V) FIGURE 4, Forward Safe Operating Area
Unit
Typical Performance Curves
VRF151G
0.35
D = 0.9
0.30 0.7
0.25 0.20
0.5
Note:
PDM
0.15 0.3
0.10
t1 t2
t1 = Pulse Duration t
0.1 0.05
0 10-5
Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC
SINGLE PULSE 10-4
10-3 10-2 10 -1 RECTANGULAR PULSE DURATION (seconds) Figure 5. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration 400 Vdd=50V, Idq = 250mA, Freq=150MHz
350
1.0
175MHz
150MHz
300
200MHz
250 200 150 100 50 0
0
2 4 6 8 INPUT POWER (WATTS PEP) Figure 6. POUT versus PIN
10
050-4938 Rev G 11-2009
0.05
OUTPUT POWER (WPEP)
ZθJC, THERMAL IMPEDANCE (°C/W)
0.40
VRF151G R1
+
L2 C4
BIAS 0–6 V
C5
C9
+
C10
C11
–
50 V –
D.U.T.
R2 C1
INPUT
T2
L1 OUTPUT C12
T1 C6
C2 C3
C7
C8
Figure 7, 175 MHz Test Circuit
R1 - 100 Ohms, 1/2 W R2 - 1.0 k Ohm, 1/2W C1 - Arco 424 C3,C4,C7,C8,C9 - 1000 pF Chip C5, C10 - 0.1 μF Chip C11 - 0.47 μF Ceramic Chip, Kemet 1215 or Equivalent (100V) C12 - Arco 422 L1 - 10 Turns AWG #18 Enameled Wire. Close Wound, 1/4” I.D. L2 - Ferrite Beads of Suitable Material for 1.5 - 2.0 μH Inductance Unless Otherwise Noted, All Chip Capacitors are ATC Type 100 or Equivalent.
T1 - 9:1 RF Transformer, Can be made of 15 - 18 Ohms Semirigid Co - Ax, 62 - 90 Mils O.D. T2 - 1:4 RF Transformer, Can be made of 16 - 18 Ohms Semirigid Co - Ax, 70 - 90 Mils O.D. Board Material - 0.062” Fiberglass (G10), 1 oz. Copper Clad, 2 sides, εr = 5.0 NOTE: For stability, the input transformer T1 must be loaded with ferrite toroids or beads to increase the common mode inductance. For operation below 100 MHz. The same is required for the output transformer.
1.100 .435
1
2
0.400
Pin 1. Drain 2. Drain 3. Gate 4. Gate 5. Source
0.390
5 0.200
3
4
.225 .107
.060
.860
1.340
Package Dimensions (inches) All Dimensions are ± .005 050-4938 Rev G 11-2009
.065 rad 2 PL
.005
.210
HAZARDOUS MATERIAL WARNING The ceramic portion of the device between leads and mounting flange is beryllium oxide. Beryllium oxide dust is highly toxic when inhaled. Care must be taken during handling and mounting to avoid damage to this area. These devices must never be thrown away with general industrial or domestic waste.
