Code No.:210451 II-B.Tech. I-Semester Supplementary Examination, June 2003
OR
b) 3.a) b) 4.a) b)
In instrinc semiconductor material, prove that the Fermi level is given by E Ev EF = c . 2 Explain Hall effect. Explain how P-type material can be determined using this. Prove that the diode current I = Io (eV / nVT 1) where Io=
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Explain how the diode current varies with temperature. Explain the terms cutin voltage, breakdown voltage, static resistance and dynamic resistance. Explain the tunneling phenomenon and how negative resistance is achieved in tunnel diode. Discuss the current components in an npn transistor. Draw the transistor in CE, CB and CC configuration and their h-parameter model.
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Answer any FIVE questions All questions carry equal marks --Determine the deflection sensitivity due to magnetic field in a CRT. Calculate the deflection of a cathode ray beam caused by earth’s magnetic field. Assume the tube is oriented and that it is normal to the field, the strength of which is 0.6 x G104w/m2. The anode potential is 400 V. The anode screen distance is 20 cm.
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ELECTRONIC DEVICES (Common to Electronics and Communication Engineering, Bio-Medical Engineering, Electronics and Instrumentation Engineering and Electronics and Control Engineering.) Time: 3 hours Max. Marks: 70
6.a)
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Discuss two methods for biasing JFETs and MOSFETs. Derive the condition for biasing for zero current drift. Draw sketches to show the basic construction and equivalent circuit of UJT. Derive an expression for the width of the depletion layer at an abrupt p-n junction. Distinguish between a p-n diode and tunnel diode from the points of view of doping, V-I characteristics and applications.
8.
Write short note on: (a) Light Emitting diodes. (b) Continuity equation. (c) Early effect. ---
210451 II-B.Tech. I-Semester Supplementary Examination, June 2003 ...
w/m · 2 . The anode potential is 400 V. The anode screen distance is · 20 cm. 2.a) In instrinc semiconductor material, prove that the Fermi level is given by · EF =.
5.a) Explain Fermi level and derive an equation for intrinsic semiconductor. b) Explain donor and acceptor impurities. How they can be added to intrinsic.
b) Explain the principle of single tuned capacitance coupled amplifiers. 3.a) Classify various commutation techniques. Also explain class A commutation.
5. a) Describe circuit switching and packet switching techniques? b) Compare connection oriented and connection less services? 6. Describe ISO-OSI seven ...
June, 2015. ELECTIVE COURSE : POLITICAL SCIENCE. EPS-08 : GOVERNMENT AND POLITICS IN. AUSTRALIA. Time : 3 hours. Maximum Marks : 100. Note. (i) Section I â Answer any ... (iii) Section III â Answer any two parts of Question. No. 13. SECTION I ...
Explain the Rabin signature scheme in 5 cryptography. 5. Explain a cryptographic protocol and entity 5 authentication protocol. 6. How does due diligence ensure Compliance of IT 5. Act ? 7. Explain the function of Cyber Appellate Tribunal. 5. SECTION
(c) Time stamp represents the time at which an event is recorded by a computer, not the ... tag or label into a multimedia object. (e) can be defined as the practice.
A leading FMCG manufacturer currently markets its brand of a clothes starch which is in dissolvable powder form. It now plans to launch a spray version of this ...
particularly the aspects of material design and development ? (f) Explain briefly the features of dual-mode distance education institutions. 3. Answer any one of the following questions in about 1200 words : (a) Explain the role of higher education i
Instrumentation Engineering, Bio Medical Engineering, Computer Science and · Information ... iv) Transformer utilization factor v) Form factor · vi) Peak factor.
1. a) Describe performance characteristics of various transducers. b) Describe standard test signals. 2. a) Write about filtering. b) Describe construction and ...
cos (2пn/N) · b) Show that out put sequence y(n) of an LTI system is the convolution of input · sequence x(n) and the impulse response of the system h(n). c) A digital system is characterized by the following difference equation: · Y(n) = x(n)+ay(n-
III-B.Tech. II-Semester Examination April, 2003 · ADVANCED COMPUTER ARCHITECTURE · (common to Computer Science and Engineering, Computer Science and · Information Technology.) Time: 3 hours · Max. Marks: 80 · Answer and five questions · All questions
IV- B.Tech. II Semester Examination April, 2003 · ARTIFICIAL INTELLIGENCE · ( Electronics and Communication Engg and Computer Science and Engg) · Time: 3 Hours · Max. Marks: 70 ... and all skiers like snow. Mike dislikes whatever Tony likes and likes
b) What are the chief merits of Induction heating? 6. a) Explain the principle of Dielectric heating. b) Discuss the thermal losses that occur in Dielectric heating.
Of what concern would the formal organization structure be to an information · systems designer? 3. âInventory Management System is a vital area of ...
How are network techniques useful to prevent time and cost over runs in project · implementation? 3. What is human resource planning? What are its objectives ...
IV- B.Tech. II Semester Examination April, 2003 · TOOL DESIGN · (Mechanical and Production Engineering) · Time: 3 Hours · Max. Marks: 70 · Answer any Five questions · All questions carry equal marks · - - - · 1.a) Sketch a single point cutting tool a
6. What are the raw materials for (a) PMMA and · (b) Nylons. Briefly explain the method of manufacture, properties and uses of the above · polymers. 7.a) What are the important Thermosetting resins? Describe the production of phenol · formal dehyde r
b) Describe the phenomenon of temper embrittlement. 7.a) Describe Irwin theory of fracture mechanism and also determine the crack · extension force exerted ...
