USO0RE38901E
(19) United States (12) Reissued Patent
(10) Patent Number: US RE38,901 E (45) Date of Reissued Patent: Nov. 29, 2005
Park et al. (54)
MANUFACTURING METHODS OF LIQUID
5,441,905 A
8/1995 Wu
CRYSTAL DISPLAYS
5,525,527 A
6/1996 Tran
5,672,523 A
9/1997 Yamamoto et al.
(75) Inventors: Woon-Yong Park, Kyungki-do (KR);
2
~
,
won'Hee Lee’Kyungk1'd°(KR)
(73) Assignee: Samsung Electronics Co., Ltd., SuWon (KR)
sick Ci 911 no e
a .
* 11/1999 Lee ........................... .. 362/31
* cited by examiner Primary Examiner—Michael Lebentritt (74) Attorney, Agent, or Firm—McGuireWoods LLP
(21) Appl. No.: 10/071,647 (22) Filed:
,
5,988,827 A
(57)
ABSTRACT
Feb. 8, 2002 An ITO (indium tin oxide) layer and a negative photoresist Related U.S. Patent Documents
are deposited sequentially on the substrate 100 having a gate Wire, a storage Wire, a data Wire and a storage electrode. The
Reissue of:
(64) Patent No.:
6,022,753 Feb. 8, 2000
and the ITO layer is etched to form a pixel electrode.
Appl. No.:
09/105,732
Because the portions of negative photoresist exposed to light
Filed:
Jun. 26, 1998 _
(30)
negative photoresist is developed through front exposure
Issued:
_
_
remain after development, pixel defects due to particles
_
_
placed between pixel regions are reduced. Both the rear
Forelgn Apphcatlon Pnonty Data
May 11, 1998
exposure and the front exposure may be used. In the rear
(KR) .......................................... .. 98-16708
eXposllre, it is di?iclllt to remain the Portions of the ITO
7 (51)
layer at the positions corresponding to the contact portion of the drain electrode and the pixel electrode, the Storage line,
Int. Cl. ........................ .. H01L 21/20; H01L 21/84 U-S- Cl- ....................... ..
the gate pads and the data pads_ Accordingly, the front
438/949 (58) Field Of Search ........................ .. 438/30, 158, 160, 438/949 (56)
exposure is then executed by using the ?rst mask having openings thereon, The negative photoresist is developed, and the ITO layer is patterned. After etching the ITO layer, bemuse the portion of the ITO layer outside the display
References Cited
region remains as a Whole, the portions of the ITO layers on
Us‘ PATENT DOCUMENTS
the gate pads and the data pads‘ remains through front exposure using a positive photoresist.
4,678,542 A
7/1987 Boer et 81.
5,198,377 A
3/1993 Kato et a1.
58 Claims, 23 Drawing Sheets
l/
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400 210
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U.S. Patent
FIG.1
720
820
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Sheet 1 0f 23
US RE38,901 E
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FIGB
Sheet 2 0f 23
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Sheet 3 0f 23
US RE38,901 E
FIGS
70820 ,x/
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FIG.4
730
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100 300 630
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7
U.S. Patent
FIG.5A
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Sheet 4 0f 23
US RE38,901 E
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m dE
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Sheet 5 0f 23
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FIG.6A
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Sheet 7 0f 23
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Sheet 8 0f 23
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Sheet 9 0f 23
US RE38,901 E
FIG.6C
1
Z
/ 700 300
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‘FIG.6D
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U.S. Patent
FIG.'7A
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Sheet 10 0f 23
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Sheet 11 0f 23
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Sheet 12 0f 23
US RE38,901 E
FIG.'7C 720
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220 100
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Nov. 29,2005
Sheet 13 0f 23
FIGBA
/730
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720
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210
910 220
—-> V1110
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710
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U.S. Patent
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Sheet 14 0f 23
US RE38,901 E
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mwruz
U.S. Patent
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Sheet 15 0f 23
US RE38,901 E
FIGBC
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Sheet 16 0f 23
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Sheet 17 0f 23
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Sheet 18 0f 23
US RE38,901 E
FIGQC 720
550 2000
{Ill4d" , f
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FIG.9D
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Nov. 29,2005
Sheet 19 0f 23
US RE38,901 E
