RPR-359F Sensors

Reflective photosensor (photoreflector) RPR-359F The RPR-359F is a reflective photosensor. The emitter is a GaAs infrared light emitting diode and the detector is a high-sensitivity, silicon planar phototransistor. A plastic lens is used for high sensitivity. In addition, since it is molded in plastic with a visible light filter, there is almost no effect from stay light.

!External dimensions (Units : mm) 8.7±0.1

3.6 0.5 3.6

0.5

!Features 1) A plastic lens is used for high sensitivity. 2) A built-in visible light filter minimizes the influence of stray light. 3) Low collector-emitter saturation voltage. 4) Lightweight and compact.

3 4

Notes : 1. Unspecified tolerance shall be ±0.2. 2. Dimension in parenthesis are show for reference. 1 Cathode 2 Anode 3 Collector 4 Emitter

0.65

1 2

4.5±0.1

0.65

0.5

(2.5)

2.0±0.3

12Min.

(4.2)

2.1±0.5 4.4

5.8±0.1

0.35

0.6±0.1

5.8±0.5

!Application Copiers, Compact disc players

4− 0.5±0.1

!Absolute maximum ratings (Ta=25°C) Parameter Input (LED)

Symbol

Limits

Unit

Forward current

IF

50

mA

Reverse voltage

VR

5

V

PD

80

mW

Collector-emitter voltage

VCEO

30

V

Emitter-collector voltage

VECO

4.5

V

IC

30

mA

Power dissipation Output (Phototransistor)

Collector current

PC

100

mW

Operating temperature

Topr

−25∼+85

˚C

Storage temperature

Tstg

−40∼+100

˚C

Collector power dissipation

1/3

RPR-359F Sensors !Electrical and optical characteristics (Ta=25°C) Symbol

Min.

Typ.

Max.

Unit

Input characteristics

Forward voltage

VF



1.3

1.6

V

IF=50mA

Reverse current

IR





10

µA

VR=5V

Output characteristics

Dark current

VCE=10V

Parameter

Transfer characteristics

Conditions

ICEO





0.5

µA

Peak sensitivity wavelength

λP



800



nm



Collector current

IC ∗

200

500

1800

µA

VCC=5V, IF=20mA, RL=100Ω, d=3.5mm

VCE(sat)



0.1

0.3

V

IF=20mA, IC=100µA

tr·tf



10



µs

VCC=10V, IF=20mA, RL=100Ω

Collector-emitter saturation voltage Response time

∗ Standard paper (90% reflection)

80

PD

60

40

20

0

0

20

40

60

80

100

10

1

0.1 0.8

100

0.1

2.4 COLLECTOR CURRENT : IC (mA)

COLLECTOR CURRENT : IC (mA)

1

1.2

1.4

1.6

1

10

100

10mA 1mA 0.8

0.4

0 0

2.0

1.8 IF=40mA

1.4 30mA

1.2 1.0 0.8

20mA

0.6

15mA

0.4

10mA 5mA

0 0

5

10

15

20

40

60

80

100

Fig.3 Forward voltage vs. ambient tempereture

2.0 1.6

20

AMBIENT TEMPERATURE : Ta (°C)

Standard paper (90% reflection) d=3.5mm

2.2

0.2

0.01 0.1

1.8

1.2

Fig.2 Forward current vs. forward voltage

Fig.1 Power dissipation / collector power dissipation vs. ambient temperature

VCC=5V Standard paper (90% reflection) d=3.5mm

1.0

1.6

FORWARD VOLTAGE : VF (V)

AMBIENT TEMPERATURE : Ta (°C)

10

2.0

Ta=25°C FORWARD VOLTAGE : VF (V)

1A

PC

25

DARK CURRENT : ICEO (µA)

100

FORWARD CURRENT : IF (mA)

POWER DISSIPATION / COLLECTOR POWER DISSIPATION : PD/PC (mW)

!Electrical and optical characteristic curves

1

VCE=30V 20V 10V

0.1

0.01

0.001 −100 −80 −60 −40 −20 0

20 40 60 80 100 120 140

FORWARD CURRENT : IF (mA)

COLLECTOR−EMITTER VOLTAGE : VCE (V)

AMBIENT TEMPERATURE : Ta (°C)

Fig.4 Collector current vs. forward current

Fig.5 Output characteristics

Fig.6 Dark current vs.ambient temperature

2/3

RPR-359F 160

100

140

FORWARD CURRENT : IF (mA)

150 d 140 130 120 110 100 90 VCE=5V 80 IF=20mA 70 60 50 40 30 20 10 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16

RELATIVE COLLECTOR CURRENT : IC (%)

RELATIVE COLLECTOR CURRENT : IC (%)

Sensors

120 100 80 60 40 20 0 −60 −40 −20

DISTANCE : d (mm)

Fig.7 Relative output vs. distance

0

20

40

60

80

AMBIENT TEMPERATURE : Ta (°C)

Fig.8 Relative output vs. ambient temperature

100

80

60

40

20

0 0

20

40

60

80

100

AMBIENT TEMPERATURE : Ta (°C)

Fig.9 Forward current vs. ambient temperature

!Circuit for testing transfer characteristics Reflector d=3.5mm

IF

IC

VCC

VCC=5V IF=20mA

3/3

This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.

Reflective photosensor (photoreflector) - GitHub

The RPR-359F is a reflective photosensor. The emitter is a GaAs infrared light emitting diode and the detector is a high-sensitivity, silicon planar phototransistor.

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