Reflective photosensor (photoreflector) RPR-359F The RPR-359F is a reflective photosensor. The emitter is a GaAs infrared light emitting diode and the detector is a high-sensitivity, silicon planar phototransistor. A plastic lens is used for high sensitivity. In addition, since it is molded in plastic with a visible light filter, there is almost no effect from stay light.
!External dimensions (Units : mm) 8.7±0.1
3.6 0.5 3.6
0.5
!Features 1) A plastic lens is used for high sensitivity. 2) A built-in visible light filter minimizes the influence of stray light. 3) Low collector-emitter saturation voltage. 4) Lightweight and compact.
3 4
Notes : 1. Unspecified tolerance shall be ±0.2. 2. Dimension in parenthesis are show for reference. 1 Cathode 2 Anode 3 Collector 4 Emitter
0.65
1 2
4.5±0.1
0.65
0.5
(2.5)
2.0±0.3
12Min.
(4.2)
2.1±0.5 4.4
5.8±0.1
0.35
0.6±0.1
5.8±0.5
!Application Copiers, Compact disc players
4− 0.5±0.1
!Absolute maximum ratings (Ta=25°C) Parameter Input (LED)
Symbol
Limits
Unit
Forward current
IF
50
mA
Reverse voltage
VR
5
V
PD
80
mW
Collector-emitter voltage
VCEO
30
V
Emitter-collector voltage
VECO
4.5
V
IC
30
mA
Power dissipation Output (Phototransistor)
Collector current
PC
100
mW
Operating temperature
Topr
−25∼+85
˚C
Storage temperature
Tstg
−40∼+100
˚C
Collector power dissipation
1/3
RPR-359F Sensors !Electrical and optical characteristics (Ta=25°C) Symbol
Min.
Typ.
Max.
Unit
Input characteristics
Forward voltage
VF
−
1.3
1.6
V
IF=50mA
Reverse current
IR
−
−
10
µA
VR=5V
Output characteristics
Dark current
VCE=10V
Parameter
Transfer characteristics
Conditions
ICEO
−
−
0.5
µA
Peak sensitivity wavelength
λP
−
800
−
nm
−
Collector current
IC ∗
200
500
1800
µA
VCC=5V, IF=20mA, RL=100Ω, d=3.5mm
VCE(sat)
−
0.1
0.3
V
IF=20mA, IC=100µA
tr·tf
−
10
−
µs
VCC=10V, IF=20mA, RL=100Ω
Collector-emitter saturation voltage Response time
∗ Standard paper (90% reflection)
80
PD
60
40
20
0
0
20
40
60
80
100
10
1
0.1 0.8
100
0.1
2.4 COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : IC (mA)
1
1.2
1.4
1.6
1
10
100
10mA 1mA 0.8
0.4
0 0
2.0
1.8 IF=40mA
1.4 30mA
1.2 1.0 0.8
20mA
0.6
15mA
0.4
10mA 5mA
0 0
5
10
15
20
40
60
80
100
Fig.3 Forward voltage vs. ambient tempereture
2.0 1.6
20
AMBIENT TEMPERATURE : Ta (°C)
Standard paper (90% reflection) d=3.5mm
2.2
0.2
0.01 0.1
1.8
1.2
Fig.2 Forward current vs. forward voltage
Fig.1 Power dissipation / collector power dissipation vs. ambient temperature
VCC=5V Standard paper (90% reflection) d=3.5mm
1.0
1.6
FORWARD VOLTAGE : VF (V)
AMBIENT TEMPERATURE : Ta (°C)
10
2.0
Ta=25°C FORWARD VOLTAGE : VF (V)
1A
PC
25
DARK CURRENT : ICEO (µA)
100
FORWARD CURRENT : IF (mA)
POWER DISSIPATION / COLLECTOR POWER DISSIPATION : PD/PC (mW)
The RPR-359F is a reflective photosensor. The emitter is a GaAs infrared light emitting diode and the detector is a high-sensitivity, silicon planar phototransistor.
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