OR

b)

3.a) b)

Explain the working of PN junction diode under (i) Forward bias and (ii) reverse bias conditions. Draw the volt-ampere characteristics of the diode in the above two cases and account for the shape of the curve.

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2.a)

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Code No:220253 II.B.Tech II-Semester. Supplementary Examinations. January,2003 ELECTRONIC DEVICES (Electrical and Electronics Engineering) Time: 3 hours. Max.Marks:70 Answer any FIVE questions All questions carry equal marks. --1.a) Explain the terms (i) Carrier mobility and (ii) Conductivity. b) Distinguish between drift and diffusion currents. c) Discuss the phenomenon of “Hall Effect”. Give one important application of Hall Effect.

Draw the structure of schottkey diode and explain the working of it. Draw the circuit symbol of schottkey diode. Explain the principle of working of Photo-diode. Draw its volt-ampere characteristics. Give its important applications. Compare the performance of transistor in CB,CE and CC configurations. Draw the input and output characteristics of p-n-p transistor in CE configuration and explain the working of it.

5.a)

Draw the structure of FET. Explain, how the depletion layer in an FET is formed and how does it have an effective control over the channel current. What are the advantages of FET over a bipolar transistor?

b) 6.a)

Discuss the motion of an electron in a uniform magnetic field with an initial velocity (i) Zero into the field (ii) o parallel to the field (iii) o perpendicular to the field (iv) o at an angle  to the field. An electron enters a magnetic field of 10 m Wb/sq.m with a velocity of 5x107 m/sec at 300 to the direction of the field. Determine (i) The time required to execute one spiral of the helical path. and (ii) The radius of the helix.

nt

b)

uW

4.a) b)

Define (i) ripple factor and (ii) regulation with reference to rectifier circuits. Draw the circuit of Bridge rectifier and explain the working of it. Compare the advantages and disadvantages of bridge rectifier and full-wave rectifier. Write short notes on any THREE of the following: (a) Intrinsic and Extrinsic type semiconductors (b) Tunnel diode (c) Varactor diode (d) UJT (e) Cathode ray tube. *********

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7.a) b) c) 8.

Code No:220253 II.B.Tech II-Semester. Supplementary ...

b) Explain the principle of working of Photo-diode. Draw its volt-ampere · characteristics. Give its important applications. 4.a) Compare the performance of transistor in CB,CE and CC configurations. b) Draw the input and output characteristics of p-n-p transistor in CE configuration · and explain the working of it. 5.a) Draw the ...

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