II Semester M.Sc. Degree Examination, June 2015 ELECTRONIC SCIENCE (NS) EL – 204 : High Power Devices Time : 3 Hours
Max. Marks : 80
Instructions : 1) Section – I : Answer all questions. 2) Section – II : Answer any four full questions. SECTION – I 1. When does the avalanche breakdown occurs in semiconductor junction devices? Give the expression for multiplication coefficient. 2. Discuss the formation of depletion layer curvature in junction diodes. 3. Give the various methods of thyristor Turn-On : 4. Discuss briefly about DMOS structure. 5. Describe the working of IGBT.
(5×4=20) SECTION – II
6. a) What is single and double injection in semiconductor ? Explain the V-I characteristics of double injection semiconductor. b) Explain the input and output characteristics of a power transistor. Show the region of the characteristic where it acts like a switch. (8+7) 7. a) Describe the significance of di/dt and dv/dt in case of thyristors. b) Using two transistor model, explain how a small gate current can turn ON a thyristor when blocking forward voltage. (8+7) 8. a) Explain the constructional details and working of power junction FET and draw its characteristics. Discuss its working in the forward conduction mode. b) Describe about dv/dt capability of MOSFET.
(8+7)
P.T.O.
*PG840*
PG – 840
9. a) Describe the basic structure of MOS controlled thyristor (MCT). Give the merits and demerits of MCTs. b) Give the constructional details and switching characteristics of a power MOSFET.
(8+7)
10. a) Describe the junction formation techniques during the fabrication of power devices. b) Explain briefly about surface passivation related to fabrication of power devices.
(8+7)
11. Write short notes on any three : a) Mesoplasma breakdown in semiconductor power devices. b) Linear and diffused junctions c) Comparison of MOSFETs and BJTs. d) Gate Turn-Off thyristor (GTO) e) Encapsulation and packaging of power devices.
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