GaAs FET CLY 2 SIEMENS.pdf

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CLY 2

GaAs FET

________________________________________________________________________________________________________

Datasheet 4

* Power amplifier for mobile phones * For frequencies up to 3 GHz * Operating voltage range: 2 to 6 V * POUT at VD=3V, f=1.8GHz typ. 23.5 dBm * High efficiency better 55 %

5 6

3 2

ESD:

Type

CLY 2

1

Electrostatic discharge sensitive device, observe handling precautions!

Marking

Y2

Ordering code (taped) Q62702-L96

.

G

Maximum ratings

1

2

Pin Configuration 3 4 5

S

D

D

S

Symbol

Package 1) 6 G

MW 6

Unit

Drain-source voltage

VDS

9

V

Drain-gate voltage

VDG

12

V

Gate-source voltage

VGS

-6

V

ID

600

mA

Channel temperature

TCh

150

°C

Storage temperature

Tstg

-55...+150

°C

Total power dissipation (TS < 50°C) 2)

Ptot

900

mW

RthChS

≤110

K/W

Drain current

Thermal Resistance Channel-soldering point 2)

1) Dimensions see chapter Package Outlines 2) TS is measured on the source lead at the soldering point to the pcb.

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CLY 2

GaAs FET

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Electrical characteristics (TA = 25°C , unless otherwise specified) Characteristics Drain-source saturation current VDS = 3 V

typ

max

Unit

IDSS

300

450

650

mA

ID(p)

-

5

50

µA

IG(p)

-

5

20

µA

VGS(p)

-3.8

-2.8

-1.8

V

G

-

15.5

-

dB

G

-

14.5

-

dB

Po

22.5

23.5

P1dB

-

23.5

-

dBm

P1dB

-

27.0

-

dBm

PAE

-

55

-

%

VGS = -3.8 V

Gate pinch-off current VDS = 3 V

min

VGS = 0 V

Drain-source pinch-off current VDS = 3 V

Symbol

VGS = -3.8 V

Pinch-off Voltage VDS = 3 V

ID = 50 µA *

Small Signal Gain ) VDS = 3 V ID = 180 mA Pin = -5 dBm

f = 1.8 GHz

Small Signal Gain **) VDS = 3 V ID = 180 mA Pin = -5 dBm

f = 1.8 GHz

Output Power VDS = 3V

dBm

ID = 180 mA f = 1.8 GHz

Pin = 10 dBm

1dB-Compression Point VDS = 3 V

ID = 180 mA

f = 1.8 GHz

1dB-Compression Point VDS = 5 V

ID = 180 mA

f = 1.8 GHz

Power Added Efficiency VDS = 3V

ID = 180mA

f = 1.8 GHz

Pin = 10 dBm *

) Matching conditions for maximum small signal gain ( not identical with power matching conditions ! )

**

) Power matching conditions: f = 1.8 GHz Source Match: Γms: MAG = 0.74, ANG 132°; Load Match: Γml: ;MAG 0.61, ANG -153°

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17.12.96 HL EH PD 21

CLY 2

GaAs FET

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Draincurrent [A]

Output Characteristics 0,5 0,45 0,4 0,35 0,3 0,25 0,2 0,15 0,1 0,05 0

PtotDC VGS=0V VGS=-0.5V VGS=-1V VGS=-1.5V VGS=-2V VGS=-2.5V

0

1

2

3

4

5

6

7

Drain-Source Voltage [V]

Compression Power vs. Drain-Source Voltage f = 1.8GHz; ID = 0.5IDSS P1dB

ηD

40 [dBm] 35

80 [%] 70

30

60

25

50

20

40

15

30

10

20

5

10

0

0 0

1

2

3

4

5 [V] 6

Dra in-Source Voltage

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17.12.96 HL EH PD 21

CLY 2

GaAs FET

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typ. Common Source S-Parameters VDS = 3 V ID = 180 mA Zo = 50 Ω f GHZ

S11 MAG ANG

S21 MAG ANG

S12 MAG ANG

S22 MAG ANG

0.100 0.150 0.200 0.250 0.300 0.400 0.500 0.600 0.700 0.800 0.900 1.000 1.200 1.400 1.500 1.600 1.800 2.000 2.200 2.400 2.500 3.000 3.500 4.000 4.500 5.000 5.500 6.000

0.99 0.99 0.98 0.97 0.96 0.94 0.92 0.89 0.86 0.84 0.82 0.80 0.77 0.74 0.73 0.72 0.72 0.71 0.71 0.71 0.71 0.72 0.74 0.76 0.78 0.79 0.80 0.83

9.17 9.11 9.01 8.89 8.75 8.40 8.03 7.61 7.22 6.82 6.45 6.10 5.45 4.92 4.71 4.48 4.10 3.77 3.47 3.19 3.06 2.52 2.12 1.85 1.61 1.43 1.23 1.06

0.007 0.011 0.014 0.017 0.021 0.026 0.031 0.036 0.039 0.043 0.045 0.048 0.052 0.055 0.056 0.057 0.059 0.060 0.062 0.063 0.063 0.065 0.066 0.073 0.078 0.085 0.085 0.087

0.15 0.16 0.16 0.16 0.16 0.17 0.18 0.18 0.19 0.20 0.20 0.21 0.22 0.23 0.23 0.24 0.25 0.26 0.27 0.29 0.29 0.32 0.36 0.39 0.42 0.45 0.49 0.52

-12.0 -17.9 -23.7 -29.5 -35.1 -46.0 -56.4 -66.2 -75.4 -84.1 -92.1 -99.7 -113.6 -125.9 -131.5 -137.1 -147.4 -157.2 -165.3 -173.3 -177.4 165.7 151.7 139.9 127.4 116.7 106.3 97.1

171.6 167.4 163.4 159.3 155.4 147.8 140.7 134.1 128.0 122.3 117.2 112.3 103.6 95.8 92.1 88.5 81.7 75.0 68.8 63.0 60.1 47.2 36.4 26.5 15.3 4.6 -5.9 -14.8

83.3 80.8 77.6 74.7 72.4 67.0 62.5 58.0 54.4 51.2 48.3 46.1 41.8 38.6 37.2 36.2 34.0 31.9 31.2 29.7 28.9 28.4 29.7 30.6 28.2 24.0 20.9 17.7

-16.6 -24.2 -31.2 -39.0 -45.9 -58.2 -69.2 -79.0 -87.0 -94.2 -100.4 -105.3 -115.1 -122.9 -125.7 -129.4 -135.0 -139.7 -143.0 -147.2 -150.0 -159.7 -167.5 -173.1 179.2 174.3 167.8 160.9

Additional S-Parameter available on CD

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17.12.96 HL EH PD 21

CLY 2

GaAs FET

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typ. Common Source S-Parameters VDS = 5 V ID = 180 mA Zo = 50 Ω f GHZ

0.100 0.150 0.200 0.250 0.300 0.400 0.500 0.600 0.700 0.800 0.900 1.000 1.200 1.400 1.500 1.600 1.800 2.000 2.200 2.400 2.500 3.000 3.500 4.000 4.500 5.000 5.500 6.000

S11 MAG ANG

S21 MAG ANG

S12 MAG ANG

0.99 0.99 0.98 0.97 0.96 0.94 0.91 0.89 0.86 0.84 0.81 0.80 0.76 0.74 0.73 0.72 0.72 0.71 0.71 0.71 0.71 0.73 0.75 0.77 0.78 0.79 0.81 0.84

9.30 9.23 9.13 9.00 8.85 8.48 8.08 7.64 7.23 6.81 6.43 6.07 5.40 4.87 4.65 4.42 4.04 3.71 3.41 3.13 3.00 2.47 2.07 1.80 1.56 1.37 1.18 1.00

0.007 0.010 0.014 0.017 0.020 0.026 0.030 0.034 0.038 0.041 0.043 0.045 0.048 0.051 0.052 0.052 0.054 0.054 0.055 0.056 0.056 0.057 0.059 0.067 0.074 0.082 0.083 0.086

-12.3 -18.4 -24.3 -30.3 -36.1 -47.2 -57.8 -67.8 -77.1 -85.9 -93.9 -101.5 -115.4 -127.6 -133.2 -138.8 -149.0 -158.6 -166.6 -174.5 -178.5 164.9 151.1 139.4 126.9 116.1 105.6 96.3

171.3 166.9 162.8 158.5 154.6 146.7 139.4 132.6 126.3 120.6 115.3 110.4 101.4 93.6 89.8 86.1 79.2 72.3 66.1 60.1 57.1 43.9 32.5 22.1 10.5 -0.6 -11.6 -20.8

83.1 80.0 77.2 73.6 71.1 65.8 61.0 56.3 52.8 49.5 46.4 44.2 40.1 36.9 35.6 34.6 32.7 30.9 30.9 29.9 29.4 30.8 34.3 36.7 34.7 30.2 26.7 22.9

S22 MAG 0.27 0.27 0.26 0.26 0.26 0.26 0.25 0.25 0.25 0.24 0.24 0.24 0.24 0.24 0.24 0.24 0.25 0.26 0.27 0.28 0.29 0.32 0.35 0.40 0.43 0.47 0.51 0.54

ANG -10.8 -15.8 -20.4 -25.7 -30.5 -39.2 -47.7 -55.4 -62.2 -68.6 -74.1 -79.2 -88.8 -96.8 -100.2 -103.9 -110.4 -116.2 -120.4 -125.6 -129.1 -140.6 -150.6 -158.2 -167.6 -174 178 169.6

Additional S-Parameter available on CD

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17.12.96 HL EH PD 21

CLY 2

GaAs FET

________________________________________________________________________________________________________

Total Power Dissipation Ptot = f(Ts)

1.0

[W] 0.8

0.6 0.4

0.2

0 0

50

100

O

C

150

Ts

Permissible Pulse Load Ptotmax/PtotDC = f(tp)

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17.12.96 HL EH PD 21

CLY 2

GaAs FET

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CLY2 Power GaAs-FET Matching Conditions Definition:

Γ

Γ

Measured Data: Typ

f [GHz]

VDS [V]

ID [mA]

P-1dB [dBm]

Gain [dB]

Γms MAG

Γms ANG

Γml MAG

Γml ANG

CLY2

0.9

3 5 6 5 6 2 3 4 5 6 3 5

175 175 175 175 175 175 175 175 175 175 175 175

22.8 25.8 26.9 25.8 26.9 19.0 22.8 24.5 25.8 26.8 21.5 26.1

15.7 16.5 16.9 16.1 16.9 15.0 15.4 15.6 15.7 16.0 13.0 13.0

0.49 0.52 0.50 0.68 0.76 0.75 0.70 0.75 0.72 0.72 0.70 0.67

75 75 76 106 113 130 125 131 131 135 158 152

0.42 0.22 0.21 0.42 0.34 0.52 0.45 0.41 0.38 0.35 0.46 0.36

-165 -172 -156 143 139 -171 -172 166 163 155 -179 -178

1.5 1.8

2.4

Note: Gain is small signal gain @ Γms and Γml

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